BBY40,235 Allicdata Electronics

BBY40,235 Discrete Semiconductor Products

Allicdata Part #:

568-13615-2-ND

Manufacturer Part#:

BBY40,235

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE VHF VAR CAP 30V SOT23
More Detail: Varactor Single 30V Surface Mount TO-236AB (SOT23)
DataSheet: BBY40,235 datasheetBBY40,235 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
10000 +: $ 0.06331
30000 +: $ 0.05821
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Capacitance Ratio: 6.5
Capacitance Ratio Condition: C3/C25
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: --
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BBY40
Description

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Diodes are components that are used to regulate and modify the path of electrical current in a circuit. In this article, we will be discussing a specific type of diode called Variable Capacitance (Varicaps, Varactors). Specifically, we shall be focusing on the BBY40,235 application field and working principle.

Varicaps are used in a variety of applications, such as in radio frequencies, speakers, TV transmissions, frequency modulation systems and many more. With regards to the BBY40,235, it is a discrete variable capacitance diode with a wide range of variable capacitance and can be used for various purposes, including in frequency modulation, high precision voltage controlled oscillators, high precision voltage controlled filters, TV tuners and even in the application of regenerative suppression of narrow-band interference.

The BBY40,235 is composed of two main components: a P+ diffusion region and a silicon nitride diaphragm structure, which form the sides of the diode. The P+ diffusion region is connected to the Anode terminal and serves as the gate electrode. The silicon nitride diaphragm is connected to the Cathode terminal and acts as the variable capacitance element. The capacitance of the BBY40,235 is adjustable via changing the applied reverse bias voltage, which is the electrical control field of the diode.

The working principle of this diode is relatively straightforward. When it is forward biased, the electrons and holes, due to their positive charged attractions, accumulate in the P+ diffusion region. As the electrons continue to accumulate in the P+ diffusion region, they form an inversion layer at the boundary near the diaphragm. This layer then acts as a dielectric between the Anode and the Cathode and produces a electric field. This electric field then directly determines the capacitance of the diode, which increases with the increase in electric field.

Once the reverse baise voltage is applied, the electrons and holes are drawn away from the inversion layer whereby the capacitance of the diode decreases. This reverse bias voltage will adjust the capacitance of the diode according to the amount of voltage applied, allowing for the diode to become an adjustable capacitance element for various applications.

In conclusion, the BBY40,235 is a discrete variable capacitance diode with a wide range of adjustable capacitance with the application of reverse bias voltage. It is widely used in radio frequencies, speakers, TV transmissions, frequency modulation systems and many more, due to its high precision and wide range of capabilities. The working principle of this diode is also quite straightforward.

The specific data is subject to PDF, and the above content is for reference

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