Allicdata Part #: | BC108B-ND |
Manufacturer Part#: |
BC108B |
Price: | $ 0.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | THROUGH-HOLE TRANSISTOR-SMALL SI |
More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 150MHz 600m... |
DataSheet: | BC108B Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.57154 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 600mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
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BC108B is a bipolar junction transistor (BJT). It is a single type, which means it consists of one n-p-n junction and two p-n junctions. It is a low-cost, general-purpose device with low current, low voltage and low power handling capability. BC108B is available in the form of a leaded package. It consists of three leads, the emitter, base and collector.
BC108B is used in a variety of applications in electronics, such as amplification, switching, voltage regulation and signal processing. It can be used as a pre-amplifier in audio systems, as an oscillator, as an amplifier in FM radios and other communication systems, as an active component in resistive-capacitive networks and in many logic circuits.
The working principle of the BC108B is based on the basic principle of BJT, which is based on the flow of electron and hole current. The emitter and collector of the transistor act as electrodes to establish a conductive path between them. The base performs the dual role of controlling the current flow between emitter and collector, while also acting as the junction between n-type and p-type semiconductor material.
BJT has two distinct current flow paths, the forward or input current (IE) and the reverse or output current (IC). The current flow from emitter to base is referred to as IE, and the current flow from collector to base is referred to as IC. The magnitude of IE determines the magnitude of IC, which is a function of the voltage between the base and the collector (Vce). This voltage is expressed as the Early voltage (VE). Thus the current gains of a BJT are expressed as a combination of Early voltage and current gain (beta or hfe).
The BC108B has a typical current gain (hfe) of 30-200 and an Early voltage (VE) of 10-100V. It has a maximum emitter current (IE) of 5A and a maximum collector current (IC) of 400mA. Its collector-emitter saturation voltage (Vce(sat)) typically ranges from 0.3-0.7V. BC108B can handle higher power ratings up to 175mW. It usually operates at temperatures between -55°C and +150°C.
In conclusion, BC108B is a low-cost, general-purpose bipolar junction transistor with low current, low voltage and low power handling capabilities. It is used for many applications in electronics and has good current gains and Early voltage operations.
The specific data is subject to PDF, and the above content is for reference
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