BC141-10 Allicdata Electronics
Allicdata Part #:

BC141-10-ND

Manufacturer Part#:

BC141-10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 60V 1A TO-39
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 50MHz 650mW Th...
DataSheet: BC141-10 datasheetBC141-10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 650mW
Frequency - Transition: 50MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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BC141-10 transistors are single, bipolar junction transistors (BJTs) manufactured by NXP Semiconductors. BJTs are commonly used in amplifying electronic circuits and in switching electronic circuits. The BC141-10 is a low power NPN transistor packaged in the Plastic Encapsulated Device (PED) package. It provides fast switching speeds and low power consumption, making it an ideal choice for many applications.

One of the primary features of BJTs is their current amplification capability. Transistors can be used as current amplifiers in circuits where a low input current is amplified to a higher output current. This is done by using the base-collector voltage to control the collector current. In the case of an NPN transistor, such as the BC141-10, the base current controls the flow of collector current. The BC141-10 is typically used for small signal amplifiers, general-purpose amplifiers, and as a switch in consumer electronics.

The BC141-10 is also used in tuned circuits such as RF amplifiers and oscillators, for voltage stabilization and regulation, for current switching and control, for DC-DC converter circuits, and for logic gates and buffers. In addition, it is an effective switching element for many other circuit functions, including audio and radio frequency switching, analog multiplexing and demultiplexing, power supply switching, and other signal switching applications.

The working principle of a BJT is based on the idea that current flow through the base-emitter junction creates a voltage drop across the base and emitter junctions. This voltage drop then causes a current to flow through the collector-emitter junction. This current can be amplified by controlling the base current. As the current through the base increases, the current through the collector-emitter junction increases, proportional to the base current.

In the case of the BC141-10 transistor, the collector to emitter saturation voltage (VCEsat) is typically 1.5V. This means that when a certain amount of base current is applied, the collector current will be limited to 1.5V. This helps to ensure that the transistor is always operating in its linear mode, as the collector current is prevented from becoming excessive. In addition, the collector to emitter current gain (hFE) is typically 50. This means that for every 1mA of base current, the collector will draw a maximum of 50mA of current.

The BC141-10 transistor is an effective and reliable choice for a wide range of applications. It can be used as an amplifier, as a switch, and in tuned circuits. Its fast switching speed and low power consumption make it an ideal solution for many applications. With its low VCEsat and high hFE, it can be used in a variety of circuits with excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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