BC487BG Allicdata Electronics
Allicdata Part #:

BC487BG-ND

Manufacturer Part#:

BC487BG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 200MHz 625m...
DataSheet: BC487BG datasheetBC487BG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC449
Description

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The BC487BG is a high amplification device used in signal processing and signal amplification applications. It is categorized under the Transistors-Bipolar (BJT) – Single category.

A bipolar junction transistor (BJT) is an electronic device composed of three different layers, P-type and N-type. It consists of two p-n junction layers connected together, forming three terminals. The terminals are the emitter (E), base (B), and collector (C). A transistor is a small device that can act as an amplifier, oscillator, or switch. Its purpose is to control the flow of a current through one of its two terminals, usually the emitter and the collector.

The BC487BG is a high power BJT device with a high current and voltage rating. It has a maximum collector-emitter voltage rating of 75V and a maximum collector current rating of 10A. It is composed of two P-N layers, each junction being connected to the other, forming three terminals: the emitter, base, and collector. The BC487BG has a peak transition frequency of 20 MHz, meaning it is suitable for applications that require high bandwidth and fast switching speeds.

In BJTs, the working principle is based on the fact that when a voltage is applied between the emitter and base terminals of the transistor, a current is allowed to flow through the transistor. This current is known as the base current. When the base current is increased, the collector current is also increased and the voltage drop between the collector and emitter terminals is decreased. Conversely, when the base current is decreased, the collector current is also decreased and the voltage drop between the collector and emitter terminals is increased. This phenomenon is known as Transistor Action, or the input-output relationship.

When this transistor action is applied in practical applications, we use it to switch, amplify, or oscillate electrical signals. In the BC487BG, it is used for signal processing and amplification. It can be used for high power audio amplifier, RF RF switching circuit and radio frequency amplifiers, among others. This BJT device also has a high switching speed and it is suitable for high speed and high frequency applications.

In conclusion, the BC487BG is a high power BJT device with a high current and voltage rating. Its peak transition frequency is 20 MHz and it is categorized under Transistors-Bipolar (BJT) – Single. Its working principle is based on transistor action, which allows it to be used for signal processing and amplification. It can be used for high power audio amplifier, RF switching circuit, and radio frequency amplifiers, among other applications. The BC487BG is a versatile device and is widely used in signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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