BC56-10PA,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	420mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-UDFN
Supplier Device Package:	DFN2020-3

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Introduction

The BC56-10PA,115 is a single, low-power bipolar junction transistor (BJT) designed for a wide range of applications. This transistor is capable of operating at a wide range of temperatures from -65°C to +150°C, making it suitable for use in environmental control applications. It is a cost-effective and highly reliable solution for many applications.

Features

The BC56-10PA,115 is a single unipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 70V. It is capable of deliverings a maximum collector current of 500mA and a maximum collector-emitter voltage of 60V. The maximum power dissipation rate of the device is 350mW. It has a low gate-source capacitance of 1.5pF and a low on-state resistance (RDSon) of 0.21 ohms. The transistor also features a fast switching speed, with a turn-on time of 8.3ns and a turn-off time of 2.3ns.

Applications

The BC56-10PA,115 is a highly reliable, cost-effective switching solution for a variety of applications, including small- and medium-sized motor control systems, portable electronics, switched-mode power supplies, audio amplification, regenerative braking systems, and any other applications where a low-power and low-cost BJT is needed.

Working Principle

The BC56-10PA,115 is a single, low-power bipolar junction transistor (BJT). In a BJT, the emitter-base junction is forward-biased, while the collector-base junction is reverse-biased. When a small current is passed through the base, this causes the entire transistor to become activated. This causes a large increase in current flow from the collector to the emitter, thus allowing a larger current to be passed from the collector to the emitter. This current can be used to drive other electrical devices. The BC56-10PA,115’s collector current and collector-emitter voltage can be adjusted by changing the value of the base current. The transistor is capable of supplying a maximum collector current of 500mA and a maximum collector-emitter voltage of 60V. The transistor also features a fast switching speed, with a turn-on time of 8.3ns and a turn-off time of 2.3ns.

Conclusion

The BC56-10PA,115 is a single low-power bipolar junction transistor (BJT) designed for a wide range of applications. It has a low gate-source capacitance of 1.5pF and a low on-state resistance (RDSon) of 0.21 ohms. It is capable of operating at a wide range of temperatures from -65°C to +150°C and delivers a maximum collector current of 500mA and a maximum collector-emitter voltage of 60V. It is suitable for use in environmental control applications, small- and medium-sized motor control systems, portable electronics, switched-mode power supplies, audio amplification, regenerative braking systems, and other applications where a low-power and low-cost BJT is needed.

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