Allicdata Part #: | BC618RL1-ND |
Manufacturer Part#: |
BC618RL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 55V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 55V 1A 1... |
DataSheet: | BC618RL1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 55V |
Vce Saturation (Max) @ Ib, Ic: | 1.1V @ 200µA, 200mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 200mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC618 |
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BC618RL1 is a member of the BC618 family of high speed low Vce saturation (SAT) transistors manufactured by NXP Semiconductors. It is an NPN silicon planar epitaxial transistor for applications that require wideband operation and low Vce(SAT). The device has three terminals-- base, collector, and emitter. The BC618RL1 transistor is often used in electronic circuits including amplifiers, low level power switches, shunt regulators, and broadband impedance matching circuits.
The BC618RL1 transistor is best suited for applications that require wide-band performance with low Vce(SAT). It has excellent linearity and high gain with a wide range of operating conditions. Additionally, the device is extremely stable, very low noise and reliable in operation. These features make it ideal for high-frequency, low-power switching, pulse-generation, and broadband impedance matching applications.
The operating principle of the BC618RL1 transistor is based on the principle of bipolar junction transistors (BJTs). In BJTs, current control is accomplished through the interaction of two p-n junctions. The base-emitter junction is forward biased and the base-collector junction is reverse biased. The current flow between the collector and the emitter is controlled by the current flow from the base to the emitter. As the base current increases, the collector current increases, and vice-versa. A transistor\'s current gain, or beta, is the ratio of the collector current divided by the base current.
The BC618RL1 transistor is designed specifically for high frequency, low-power switching applications where low Vce(SAT) is desired. It can handle moderate to large signal amplitudes, as well as high frequency switching signals. Additionally, it is capable of withstanding high-voltage transients and other extreme environmental conditions. The device is available with three collector current ratings - 10A, 6A, and 3A - to accommodate a wide range of applications.
The BC618RL1 transistor is suitable for a wide variety of applications, including amplifiers, low level power switches, shunt regulators, and broadband impedance matching circuits. It provides excellent linearity and large signal performance, making it well suited for high-frequency, low-power switching, and pulse-generation applications. The device is available with three different collector current ratings, providing flexibility and a level of customization for each application. Furthermore, the device is designed for stability, low noise, and reliability in operation, making it an ideal choice for a variety of applications that require wideband performance with low Vce(SAT).
The specific data is subject to PDF, and the above content is for reference
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