BC69PA,115 Allicdata Electronics
Allicdata Part #:

1727-2361-2-ND

Manufacturer Part#:

BC69PA,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANSISTOR PNP 20V 2A SOT1061
More Detail: Bipolar (BJT) Transistor PNP 20V 2A 140MHz 420mW S...
DataSheet: BC69PA,115 datasheetBC69PA,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07272
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 420mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: DFN2020-3
Description

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BC69PA,115 transistors are a type of bipolar junction transistors (BJT) single transistors. They are commonly used in transistor arrays and as complementary low noise transistors. This article will discuss the application field and working principle of BC69PA,115 transistors.

Applications

BC69PA,115 transistors have numerous applications, primarily in high-reliability low-noise IC applications due to their low-noise characteristics. They feature high gain bandwith, low noise figure, low offset voltage and low capacitance. these characteristics mak them suitable for robust and reliable low-noise performance.

They are also used in analog pre-amplifiers and advanced amplification circuits, which can be used to amplify weak signals. BC69PA,115 transistors are usefult in the amplification of very low frequency signals, such as power line noise and audio signals, as they are capable of providing superior frequency response and wide dynamic range.

In addition to that, BC69PA,115 transistors can also be used in radio receivers, microwave amplifiers, audio amplifiers and signal processors.they are also commonly used in pulsed power applications and wideband signal amplifiers.

Working Principle

The BC69PA,115 is based on the NPN (negative-positive-negative) structure of a bipolar junction transistor. It has three terminals, the emitter, base and collector. When a voltage is applied to the base-emitter junction, a current flows between the emitter and collector terminals, allowing current to flow between the collector and emitter.

The amount of current that flows between the emitter and collector is determined by the amount of voltage applied at the base. This is known as current gain or "hFE". Generally, a higher hFE means higher gain and a better linear response.The BC69PA,115 transistors have an hFE of anywhere from 140 to 250 depending on the transistor\'s current rating.

At the same time, the BC69PA,115 features a low saturation voltage, which is the amount of base-emitter voltage required for full saturation. This voltage is generally at least 0.5V lower than that of a regular NPN transistor of the same rating. The low saturation voltage of the BC69PA,115 makes it the ideal choice for applications that require lower power consumption and higher amplification levels.

In conclusion, the BC69PA,115 transistors are suitable for a wide range of applications due to their high gain bandwith, low noise figure, low offset voltage and low capacitance. They are particularly useful in low-noise applications such as analog pre-amplifiers, advanced amplification circuits, and radio receivers. Their NPN structure allows them to achieve a low saturation voltage, which gives them an efficiency advantage over standard NPN transistors.

The specific data is subject to PDF, and the above content is for reference

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