Allicdata Part #: | 1727-1213-2-ND |
Manufacturer Part#: |
BCM856BSH |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP 65V 0.1A 6TSSOP |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) Matche... |
DataSheet: | BCM856BSH Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06680 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 175MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP, SC-88 |
Base Part Number: | BCM856 |
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The BCM856BSH is an array of eight NPN bipolar junction transistors commonly referred to as BJT’s. It is primarily used as a switch device in a variety of different applications. It is commonly used in consumer electronics, as well as in industrial and automotive applications.
The BCM856BSH includes a dielectric isolation (DI) which is a layer of insulation that separates two semiconductor layers. This is important to prevent unintentional electrical contact between the two layers and helps to reduce the switching noise of the device. It also includes the NPN driving transistors which are used to drive the devices output. This array is fully symmetrical and can be used in multiple configurations.
The BCM856BSH is capable of operating at frequencies as high as 10GHz, making it suitable for high-speed data communication applications. It is rated for voltage levels up to 75V, and power levels of up to 145W. It has a low power consumption of 1 mA, making it suitable for battery powered applications where power consumption is a concern.
The BCM856BSH operates in three different modes depending on the application. The first mode is “NORM”, which is a low speed operation that is used for most applications. In this mode, the transistors are in an off state, allowing the user to control the transistors via digital input signals. The second mode is “HIGH”, which is a high-speed operation used for data-transmission applications. In this mode, the NPN transistors are in an on state, allowing the user to control the transistors via digital input signals. The third mode is “Power”, which is used for operations that require high-power output.
The working principle behind the BCM856BSH is simple. It uses n-type semiconductor layers to create a electric field between the two layers. This electric field is used to transfer voltages and currents to the transistors, which in turn control the output signals. The switching of the transistors is controlled by the digital input signals, which can be used to determine whether the device is in either NORM or HIGH mode.
The BCM856BSH is an excellent choice for applications where low power consumption, high-speed operation, and low switching noise are important. It is ideal for applications in consumer electronics, industrial, and automotive applications. It is a reliable, efficient, and cost-effective choice for any application.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...