BCM847BV,115

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The BCM847BV,115 is a high speed array transistor designed for use in electronic equipment and circuits. It is a part of the transistors - bipolar (BJT) - arrays family and is tailored to provide optimum performance in high-speed applications. The device’s maximum power dissipation rating is 2W. It has a maximum operating junction temperature rating of 175°C and can be operated with a collecting emitter voltage of 15 V or below. The BCM847BV,115 is a versatile device that offers a wide range of useful features including its fast response time, low noise, and minimal power dissipation.

The BCM847BV,115 has a maximum voltage between collector and emitter of 60 V and a maximum collector current of 200 mA. It also features a high speed switching time of 25 ns which makes it ideal for high-speed applications such as laptop computers, cameras, and other consumer electronics. The fast switching time also ensures that there is minimal power loss when operating the device.

The BCM847BV,115 is suitable for use in a wide range of electronic equipment and circuits. Applications for this device include power conversion circuits, power supply circuits, timer circuits, motor and relay control circuits, and other circuits where high frequency and high speed performance are required. In addition, the device can also be used in amplifier circuits, digital-to-analog/analog-to-digital converter circuits, line protection circuits, and other important circuits in which high-speed switching elements cannot be used.

The working principle of the BCM847BV,115 device is based on the principle of current conduction between the collector and emitter terminals of the device. This is achieved when the transistor is forward biased and current is allowed to flow from the collector to the emitter. The amount of current flow is determined by the base current, which is determined by the amount of voltage applied to the base terminal. When the transistor is reverse biased, no current flows from the collector to the emitter.

The BCM847BV,115 is a high-speed array transistor designed for use in electronic equipment and circuits. It is ideal for high-speed applications where low noise and minimal power dissipation is desired. Its maximum power dissipation rating is 2W and its maximum operating junction temperature rating is 175°C. It offers a fast response time, low noise, and minimal power dissipation, making it a useful device in a wide range of electronic applications.

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