Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 100mA, 5V
Power - Max:	1.5W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Base Part Number:	BCP49

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Introduction

BCP49H6359XTMA1 is a type of single-ended bipolar transistor (BJT) which is widely used in various applications across different industries. It is especially popular with applications involving lighting, sensors, logic gates, audio amplifiers, voltage regulators, frequency converters and other general purpose digital components. This paper will discuss the application field of this transistor, including the associated working principle.

Overview of the BCP49H6359XTMA1

BCP49H6359XTMA1 is considered to be a medium power NPN bipolar transistor. It includes 3 pins; the base, collector and emitter. The collector voltage capability of this device is around 350 volts and the DC current gain is around 250 base-emitter Volts. It primarily uses diffusion silicon as its main material, along with metals like gold (for inter-metal connection), aluminum, copper and silver. It also has an 4 watt dissipation rate and an operating temperature range of -55 to +150 °C.

Application Field

The BCP49H6359XTMA1 has been designed for various applications across different fields, including automotive, industrial, telecommunications and consumer electronics. It can be used to upgrade the current level in regular power transistors, as well as in 2-way switching applications and voltage regulator circuits. This device is used in a variety of circuits, such as those involved in motors, power supplies, security systems, audio amplifiers and other general purpose digital components. Its high current gain makes it ideal for use in medium power switching and amplifying circuits.

Working Principle

The BCP49H6359XTMA1 works on the principle of a NPN bipolar transistor. This device relies on two layers of doped semiconductor material to produce a current between the base and the collector terminals. The base-emitter capacitance acts as the input while the base- collect capacitance acts as the output of the transistor. When a current is applied to the base terminal, it causes a voltage drop in the collector junction which produces a current at the output. This current can then be used to drive a load or to amplify a signal.

Conclusion

The BCP49H6359XTMA1 is a type of single-ended NPN bipolar transistor that can be used in a variety of different applications across different industries. It has a medium current gain and is especially suited for use in medium power switching and amplifying circuits. It works on the principle of a NPN bipolar transistor where two layers of doped semiconductor materials are used to create a current between the base and the collector terminals. Thanks to its versatility and its ability to produce a stable output, this transistor has become a popular choice for many different applications.

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