| Allicdata Part #: | BCR108SH6327XTSA1TR-ND |
| Manufacturer Part#: |
BCR108SH6327XTSA1 |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
| DataSheet: |  BCR108SH6327XTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 18000 +: | $ 0.03353 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
| Base Part Number: | BCR108S |
| Supplier Device Package: | PG-SOT363-6 |
| Package / Case: | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type: | Surface Mount |
| Power - Max: | 250mW |
| Frequency - Transition: | 170MHz |
| Current - Collector Cutoff (Max): | -- |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 2.2 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
Description
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：BCR108SH6327XTSA1 is a PNP Pre-Biased Array Transistor, a Bipolar-Junction Transistor (BJT). It is a three-terminal device made of two p-type semiconductor layers sandwiched between an n-type layer, thus forming a P-N-P structure. It is used as a current gain device, with current flowing from the collector to the emitter. It can also be used to connect several circuits, or switch signals on and off.BCR108SH6327XTSA1 has a wide operating temperature range and a wide voltage range, making it suitable for various applications. It is often used in high current switching applications (high current relay and switching supplies), for fire detection systems, and for controlling air flow in heating, ventilation, and air conditioning systems.The specific characteristics of BCR108SH6327XTSA1 make it suitable for many applications. It has an extremely low leakage current and fast switching times, making it an ideal choice for fast and reliable switching operations.The working principle of BCR108SH6327XTSA1 is based on hole injection. When the gate voltage is increased, current increases in the device and a high current gain is obtained. This is because the lower band gap of the collector-base junction causes electrons to flow from the emitter to the base, making the collector current to increase.The device also has a low output and base impedance, so the gain obtained will be greater than the gain obtained from other transistors. Moreover, the device\'s high current capacity enables it to operate at high frequencies, while the low noise of the device ensures less interference.BCR108SH6327XTSA1 is an ideal choice for many applications, including high current switching, fire detection systems, and controlling air flow in heating and cooling systems. Its wide operating temperature range ensures that it can operate reliably in a variety of environments, and its wide voltage range makes it suitable for a variety of applications. Moreover, BCR108SH6327XTSA1\'s low leakage current, fast switching times, low output impedance, and high current gain make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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