PUMH1/DG/B3,115 Allicdata Electronics
Allicdata Part #:

PUMH1/DG/B3,115-ND

Manufacturer Part#:

PUMH1/DG/B3,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS RET SC-88
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PUMH1/DG/B3,115 datasheetPUMH1/DG/B3,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100mA
Frequency - Transition: 230MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The PUMH1/DG/B3,115 is part of Texas Instrument\'s Pre-Biased Bipolar Transistor Arrays. These types of components come with several features such as low power consumption, low noise, improved circuit protection, automatic gain control, and electronic packaging. Generally, pre-biased transistors are used to provide an easy and fast way for a current to flow and for the voltage to remain constant. The PUMH1/DG/B3,115, in particular, is capable of controlling a wide range of currents due to its high linearity and low current consumption. The PUMH1/DG/B3,115 also has a wide temperature range and can operate from -30°C to +125°C. Furthermore, this component also has high resistance to electrostatic discharge and fast switching speed.

The PUMH1/DG/B3,115 is mainly used in applications where linearity and current control are the main devices in use. This device is often used to provide a low noise and low power consumption in audio applications, such as amplifiers and power supplies, as well as in automotive and industrial control systems.

To control the current, the PUMH1/DG/B3,115 uses a bias-resistor transistor array that consists of several transistors. The transistors are connected to each other in a daisy-chain. The transistors are also connected to the ground with a resistor, which helps to prevent the transistor array from forming a positive feedback loop. When the base current is applied to the array, it is then split into five equal parts and the transistor array will turn on and off accordingly. This allows for the current to be regulated and for the voltage to remain the same. This makes the PUMH1/DG/B3,115 a great component for use in applications where high current control and low noise are required.

In addition, the PUMH1/DG/B3,115 also includes several current limiting features. This includes a current limiting resistor, which helps to limit the amount of current a device can draw. There is also a thermal protection system that helps to protect the component from overloading and overheating, which can be caused by high current flow. Finally, the component is designed to be used with other components and devices that can be controlled by the same current limiting features. This allows for the component to be used in a wide range of applications.

Overall, the PUMH1/DG/B3,115 Pre-Biased Bipolar Transistor Arrays is a great component for applications that require low power consumption and low noise. Additionally, its low current consumption and wide temperature range make it an ideal component for applications that require current control. This makes the PUMH1/DG/B3,115 an ideal component for a variety of applications, including audio, automotive, and industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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