PUMD2/DG/B3,115 Allicdata Electronics
Allicdata Part #:

PUMD2/DG/B3,115-ND

Manufacturer Part#:

PUMD2/DG/B3,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS RET SC-88
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PUMD2/DG/B3,115 datasheetPUMD2/DG/B3,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The PUMD2/DG/B3,115 is a type of transistor that belongs to the family of bipolar junction transistors (BJT) arrays and pre-biased transistors. It is typically used in power supply, communications, and industrial applications that require medium to high current gain, low noise, and excellent switching properties.

The device consists of two PNP transistors in a single package. Each transistor has its own emitter connection, while the two bases are connected to a common base terminal. This arrangement allows the PUMD2/DG/B3,115 to be used to provide a medium to high current gain, low noise and excellent switching characteristics, without the need for an external bias resistor – it is pre-biased.

The device is typically used in a wide range of applications, including power supplies, high-speed digital logic, analog signal processing, and data communications, to name a few. It can be used in AC/DC switching power supplies and DC-DC converters, and is also useful for low-side current detection. In addition, it can also be used in DC level detectors, wide input range comparators, and even remote control applications.

The PUMD2/DG/B3,115 has two main advantages over other types of transistors: its pre-biased nature and its low-noise characteristics. The pre-biased nature allows the device to be used without the need for an external bias resistor, reducing the complexity of the circuit. The low noise characteristics ensure that the transistor can be used in environments with low levels of interference and noise.

The PUMD2/DG/B3,115 works on the principle of current gain. It works by allowing an electrical current to flow along the device from one end to the other. As the current goes from one end to the other, the device amplifies it. This process is known as amplification. The amount of amplification obtained can be controlled by adjusting the current in the device.

The PUMD2/DG/B3,115 is an effective transistor for a wide range of applications. It is pre-biased, which means it does not require an external bias resistor, which makes the circuit design simpler. In addition, its high current gain, low noise, and excellent switching properties make it ideal for power supplies, logic applications, and more. Its low noise characteristics also make it suitable for applications in environments with low levels of noise.

The specific data is subject to PDF, and the above content is for reference

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