Allicdata Part #: | BCR108WE6327BTSA1TR-ND |
Manufacturer Part#: |
BCR108WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR108WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR108 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 170MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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:The BCR108WE6327BTSA1 is a single, pre-biased, bipolar junction transistor (BJT) designed for use in a variety of electronic applications. It is suitable for use in high-power, high-frequency applications such as DC-DC converters, power amplifiers, switching circuits, and audio-frequency amplifiers. It features a high-temperature cutoff and ESD protection.
The BCR108WE6327BTSA1 features a monolithic silicon oxide-assisted baseplate region and a low-voltage collector-emitter breakdown rating of 50V. It offers excellent thermal characteristics, with a maximum junction temperature of 150°C and a collector-emitter saturation voltage of 0.25V at 1A collector current. The transistor has a low input capacitance, allowing it to be used in high-frequency applications. The transistor increases power output by cooling the device using an onboard heat sink.
The BCR108WE6327BTSA1 has a low-noise transistor structure and low-power consumption. It offers good protection against static electricity, thermal runaways, and it is used in high-voltage circuits. It provides fast turn-on/off times and reduces insertion losses and distortion in the signal. This makes it suitable for use in a wide range of switching and amplifier applications such as audio amplifiers and switches.
The BCR108WE6327BTSA1 has a working principle based on two materials, one p-type silicon layer and an n-type silicon layer. The two layers are placed together in a formation, and the two opposite electrical charge carriers form a junction. Due to holes and electrons, current flows across the junction. A voltage applied from an external source polarizes the junction differently and allows current to flow. By adjusting the voltage on each side of the junction, the current can be switched off. This process is called bipolar junction transistor (BJT) action.
The BCR108WE6327BTSA1 is a versatile transistor and can be used in a variety of applications. Its high-power and high-frequency capabilities make it suitable for DC-DC converters, power amplifiers, switching circuits, audio-frequency amplifiers, and more. It is a dependable device, offering static electricity protection and ESD protection, fast turn-on/off times, and a high-temperature cutoff. Its low-power consumption, low-voltage breakdown ratings, and low input capacitance make it ideal for use in high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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