Allicdata Part #: | BCR166WE6327HTSA1TR-NDTR-ND |
Manufacturer Part#: |
BCR166WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR166WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR166 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 160MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BCR166WE6327HTSA1 is a high performance single, pre-biased bipolar junction transistor (BJT). This device is commonly used for various applications, such as voltage control, in-circuit programming, switching, and high speed applications. With its integrated pre-biased circuitry, the BCR166WE6327HTSA1 can provide a faster switching time, compared to conventional BJTs.
BCR166WE6327HTSA1 is a NPN transistor with a PN junction which is composed of two separate sections - the base and the collector. The collector has two distinct functions. Firstly, it acts as a current collector, collecting the current generated by the base and providing a path for the collected current to flow through. Secondly, the collector is a voltage supply, supplying a potential difference to the base, thus allowing voltage control.
The working principle of the BCR166WE6327HTSA1 is relatively simple. The pre-biased feature of the device means that the base and collector sections of the transistor are already pre-biased in the correct direction. This allows current to flow through the collector and into the base, thus creating a continuous current loop.
By controlling the current flowing through the collector and base, the user can control the current amplitude, allowing the transistor to switch on and off, change the device’s gain (PA, GA, etc), and alter other electrical properties of the circuit. The pre-biased feature of the BCR166WE6327HTSA1 also helps with reducing switching time, as the device does not need to re-adjust its bias when reconnected once power is applied.
The BCR166WE6327HTSA1 is a common choice for designers who need high-performance transistors with a faster switching time. This device can be used in a wide range of applications, such as voltage control, in-circuit programming, and in high-speed applications. With its integrated pre-biased circuitry, this device can provide users with an easy to use, efficient and reliable transistor that is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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