BCR112WH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BCR112WH6327XTSA1TR-ND

Manufacturer Part#:

BCR112WH6327XTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW SOT323-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR112WH6327XTSA1 datasheetBCR112WH6327XTSA1 Datasheet/PDF
Quantity: 1000
36000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Base Part Number: BCR112
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 140MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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BCR112WH6327XTSA1 is a pre-biased single transistor which belongs to the Transistors – Bipolar (BJT) family. This transistor is well-suited for use in applications requiring current overload capability and superior temperature stability. BCR112WH6327XTSA1 comes with a guaranteed operating power dissipation of 1W at the optimal junction temperature of 175℃. The reverse gate leakage current of this transistor is less than 0.1µA. With an excellent thermal response time, BCR112WH6327XTSA1 provides superior switching speed. It has a minimum turn-on time of 10ns and a minimum turn-off time of 8ns.

BCR112WH6327XTSA1 is used in various applications such as audio amplifiers, signal amplifiers, signal processors, signal generators and power converters. Its superior switching speed makes it suitable for use in high-speed applications. It is also suitable for high temperature applications with its low thermal resistance. Its current overload capability and superior temperature stability makes it an excellent choice for power applications where long-term reliability is a priority.

BCR112WH6327XTSA1 operates on the principle of an NPN bipolar transistor. A bipolar transistor consists of three main elements: emitter, base and collector. It works on the principle of amplification by current or voltage. The current gain of BCR112WH6327XTSA1 is typically 10-50. The current amplification factor (β) of BCR112WH6327XTSA1 is typically 30-50 in the forward direction. The reverse current flow is blocked due to its built-in pre-bias. It is recommended to use appropriate base current to avoid overloading of the transistor.

BCR112WH6327XTSA1 is also available in other packages such as DPAK and SOT-223. It is recommended to use an appropriate protective circuit for this transistor to avoid damages due to current overloads. It is important to note that the operating voltage and current should be within the specified limits. BCR112WH6327XTSA1 is available in both through hole and surface mount packages for easy installation and assembly.

In conclusion, BCR112WH6327XTSA1 is an excellent choice for applications that require current overload capability, superior temperature stability, superior switching speed and excellent thermal response. It is available in various packages that make installation and assembly easy. It is important to note that the operating voltage and current should be within the specified limits.

The specific data is subject to PDF, and the above content is for reference

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