Allicdata Part #: | BCR119SE6433HTMA1TR-NDTR-ND |
Manufacturer Part#: |
BCR119SE6433HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | BCR119SE6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 5mA, 5V |
Base Part Number: | BCR119S |
Supplier Device Package: | PG-SOT363-6 |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR119SE6433HTMA1 is a pre-biased array of two Bipolar Junction Transistors (BJTs). Its applications range from discrete high-speed switches, level shifters, and other control functions, to voltage mirrors and various amplifiers. The device has a wide supply voltage range, side platforms that offer a low noise performance and high gain, and a metal package that provides superior thermal performance. It is also designed with a low power consumption feature, excellent thermal characteristics, and its compact size makes it suitable for a variety of applications.
The operating principle of BCR119SE6433HTMA1 is based on two BJTs. As the two transistors are pre-biased, the device can be configured in a wide range of configurations, enabling a variety of circuit functions such aslevel shifting, line driver, or operational amplifier. The two BJTs are connected in what is known as a Darlington configuration, which ensures the highest current gain. In addition, the Darlington configuration allows for the device to operate at lower currents, allowing for improved efficiency and power savings.
The device also features a low operating voltage, which makes it suitable for a variety of applications. This device also has a high gain, which means it can be used to amplify signals in a variety of analog and digital applications. The device also has side platforms that enable a low noise performance and high gain, as well as superior thermal performance. As a result, it is suitable for use in high speed switches, level shifters, and other control functions.
The BCR119SE6433HTMA1 is an example of a versatile pre-biased array of two Bipolar Junction Transistors (BJTs). Its applications range from discrete high-speed switches, level shifters, and other control functions, to voltage mirrors and various amplifiers. The device also has a low power consumption feature and excellent thermal characteristics, allowing for improved efficiency and power savings. Moreover, its small size makes it suitable for a variety of applications, making it a great choice for designers who are looking for a pre-biased BJT array with a wide range of uses. This device is a perfect choice for anyone interested in providing reliable and efficient control in high speed applications.
The specific data is subject to PDF, and the above content is for reference
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