BCR119WE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCR119WE6327HTSA1TR-NDTR-ND

Manufacturer Part#:

BCR119WE6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW SOT323-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR119WE6327HTSA1 datasheetBCR119WE6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BCR119
Description

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Bipolar Junction Transistors, or BJTs, are the most common type of device used in electronics and are preferred in applications ranging from logic circuits to amplifiers and motor control. Among BJTs, the BCR119WE6327HTSA1 is one such example of a single pre-biased device, which means it is already equipped with the appropriate bias voltages to either switch or amplify electrical signals.

Application Field

The BCR119WE6327HTSA1 bipolar junction transistor is primarily used for general purpose switching, such as low- to mid-power switching circuits. The device can serve as a switch or amplifier, depending on the type of bias applied. Its versatility is a major advantage to its use in these applications. Additionally, the device is notable for its low power consumption, high switching speed and high breakdown voltage.

Working Principle

The working principle of the BCR119WE6327HTSA1 comes down to three interconnected layers. First is the Base layer, which receives voltage signals. This layer then passes them along to the second layer, the Collector, which amplifies the voltage to a higher level. The third layer, the Emitter, then takes the amplified voltage and pushes it out into other circuits. It is this amplification process that makes BJTs useful for many different applications.

Conclusion

The BCR119WE6327HTSA1 is an excellent choice of bipolar junction transistor due to its versatility, low power consumption and high switching speed. Its three interconnected layers - base, collector and emitter - make it well-suited for low- to mid-power switching circuits, amplifiers and motor control. The device is easy to use, so it is popular with hobbyists. Thanks to its pre-biased design, it requires minimal setup before use.

The specific data is subject to PDF, and the above content is for reference

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