Allicdata Part #: | BCR133E6433HTMA1TR-ND |
Manufacturer Part#: |
BCR133E6433HTMA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 0.2W SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR133E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
40000 +: | $ 0.01595 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | BCR133 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 130MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Description
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.Transistors - Bipolar (BJT) - Single, Pre-Biased
Introduction to the BCR133E6433HTMA1
The BCR133E6433HTMA1 is a pre-biased switch-mode transistor, used to switch voltages and currents in a variety of applications. It has a built-in active load switch and a high-current gain of up to 35dB (1kHz - 70kHz band). The package type is through-hole, making it well suited for easy prototyping and customization.Application Fields of BCR133E6433HTMA1
The BCR133E6433HTMA1 can be used in a variety of applications, such as radio transmitters, receivers, audio amplifiers and power supplies. Its maximum withstand voltage is equal to 200V and its maximum forward current is equal to 2.3A. It is also used in high-current switching systems, as a low-noise preamplifier in audio applications, and as an adjustable gain filter. Other uses include motor control, HVAC applications and sensor control.Working Principle of BCR133E6433HTMA1
The BCR133E6433HTMA1 is constructed from a die-mounted transistor, with a built-in active load switch and an emitter follower. The output signal is coupled to the emitter, while the input signal is coupled to the base. Due to its built-in active load switch, the transistor can be loaded with an appropriate voltage or current, according to application needs. At the input signal\'s higher voltage levels, the transistor remains in the cutoff state, where it behaves almost like an open circuit. As the input signal\'s voltage starts to decrease, the transistor is slowly turned "on" and starts to conduct current, according to its gain. As the input signal\'s voltage continues to decrease, the transistor is saturated and reaches a maximum current level. At this point, the transistor behaves almost like a short circuit. At the same time, the built-in active load switch limits the output current to the appropriate levels. This ensures that the output voltage levels remain within the specified range, even when subjected to higher input voltage levels. The BCR133E6433HTMA1 is ideal for applications that require high-current gain and low-voltage drop. It has been designed to offer superior thermal performance, even at higher voltage levels, and an enhanced current gain. Due to its miniature size, it is well suited for applications where space is at a premium.Conclusion
The BCR133E6433HTMA1 is a pre-biased switch-mode transistor, suitable for a variety of high-current applications. It is built with a die-mounted transistor, with a built-in active load switch and a high-current gain. It offers superior thermal performance, even at higher voltage levels, and an enhanced current gain. Thanks to its compact package, it is an ideal space-saving device for prototyping and customization.The specific data is subject to PDF, and the above content is for reference
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