BCR135E6327HTSA1

DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Part Number:	BCR135
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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BCR135E6327HTSA1 Application Scope and Working Principle

BCR135E6327HTSA1 is a single, pre-biased, bipolar transistor. It belongs to the family of technology which is used for a wide range of applications, including low power and analog circuits, automotive and industrial applications, and optoelectronic circuits. BCR135E6327HTSA1 is commonly used for light-switching and actuation applications, as well as for sensing, inverting, and amplifying circuits. This device has a collector-emitter voltage of 65V and a collector current of 270mA. It is designed using a collector-emitter voltage of 5V, which makes it suitable for a wide range of low-current applications. The device has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C which makes it suitable for a wide range of environments. The BCR135E6327HTSA1 consists of two transistors in a single package, with a pre-biased base current before the main circuit is powered. This makes it much easier to set up and use in various electronics applications. In addition, the pre-biased NPN transistor of the BCR135E6327HTSA1 has a higher ratio of collector current to base current compared to a PNP transistor, thereby making it ideal for applications that require a high base current. This device also has built-in protection diodes which guard the front gate from reverse voltage. The working principle of the BCR135E6327HTSA1 is relatively simple. When the chip is powered, the base current is generated by a current sink. This causes the collector-emitter voltage to fall and the base-emitter voltage to rise, thereby allowing current to flow through the collector-emitter junction. When it is not powered, the base-emitter voltage reverses and the current is stopped. The BCR135E6327HTSA1\'s base-emitter voltage of 5V allows for easy circuit design and helps reduce the power consumption of the device. It also helps to prevent thermal runaway, which occurs when the base current is too high. The device has a high current gain of 200, which ensures that it performs reliably in low-power applications. Furthermore, the collector-emitter voltage of 65V ensures that the device is suitable for use in a number of different power supply configurations. In conclusion, the BCR135E6327HTSA1 is a high-performing, single, pre-biased bipolar transistor suitable for a wide range of applications. With its pre-biased base current and its protection diodes, it is an ideal choice for light-switching, actuation, sensing, and amplification designs. Furthermore, its high current gain and low power consumption make it suitable for low-power applications. Finally, its wide operating temperature range makes it suitable for a wide variety of environments.

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