BCR135SE6327BTSA1

DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Part Number:	BCR135S
Supplier Device Package:	PG-SOT363-6
Package / Case:	6-VSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	--
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BCR135SE6327BTSA1 is an integrated circuit (IC) containing an array of transistors configured in a pre-biased formation. This product contains two transistors, commonly referred to as a dual-transistor array, and is designed to facilitate electronic signal manipulation. It is a component produced by the semiconductor manufacturer, Infineon Technologies, and falls under the product category of transistors – bipolar (BJT) – arrays, pre-biased.In simple terms, transistors are used in semiconductor electronics to control the flow of electrical current. This is accomplished by controlling the electrical resistance of the transistor. The current travelling through the transistor can be either increased or decreased by adjusting this resistance. This is known as current gain. Bipolar transistors, in particular, are also used to switch electrical signals on and off with the help of a third terminal (base terminal).A dual-transistor array, such as the BCR135SE6327BTSA1, works similarly to an individual bipolar transistor. However, it is configured to contain two transistors rather than one. The benefit of such an arrangement is current isolation. Each transistor is isolated from the other, allowing for greater flexibility in the manipulation of electrical signals.This particular component is a pre-biased transistor array. This means that the on-state or off-state of the transistors can be predetermined by adjusting the voltage applied to the component. Normally, the voltage applied to the base terminal of a single transistor would be used to control the current gain. In a pre-biased transistor array, the voltage is used to determine the on-state or off-state of the transistors. This helps to simplify signal manipulation and increases the overall efficiency of the circuit.BCR135SE6327BTSA1 is a versatile component that can be used in a wide range of applications. It is particularly suitable for circuits requiring high RPM, such as motor drives, frequency converters and other high-speed switch applications. It has a reverse current breakdown voltage of 135V, meaning it can handle voltages up to 135 Volts with minimal reduce in performance. This makes it ideal for applications in which high voltage is required.In addition to its use in high voltage applications, BCR135SE6327BTSA1 can also be used in circuits that require more complex signal manipulation. The dual-transistor array allows for multiple stages of amplification to be used, which can be used for signal mixing and signal clustering applications. The pre-biased semiconductor also offers a degree of self-protection by preventing over-voltage or current beyond the specified limit from damaging the circuit.BCR135SE6327BTSA1 is a versatile, dual-transistor array designed for a range of applications. By using a pre-biased arrangement, the component simplifies signal manipulation and offers a degree of self-protection. This makes it suitable for a range of different applications, from motor drives and frequency converters to more complex signal manipulation circuits.

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