Allicdata Part #: | BCR135SH6327XTSA1TR-ND |
Manufacturer Part#: |
BCR135SH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | BCR135SH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR135S |
Supplier Device Package: | PG-SOT363-6 |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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BCR135SH6327XTSA1 is a unique transistor array specifically developed for power switching applications. Its distinct design makes it an excellent choice for linear and high-frequency applications as well.
This component is part of a group of devices known as Bipolar Junction Transistors (BJTs) which are characterized by a base, collector and emitter terminal. Although these components are typically used for high power applications in the range of tens of amps, the BCR135SH6327XTSA1 offers an improved package with a vast potential for low current applications.
The BCR135SH6327XTSA1 is used in applications that require low current in both linear and high-frequency. It is designed to withstand currents up to 10mA and voltages up to 60V. This component can handle switching frequencies up to 1.5GHz.
The BCR135SH6327XTSA1 is especially well suited for use in power switching applications due to its unique design. The device consists of 2 gate controlled transistors, allowing for greater flexibility and control over the device. One gate control transistor is used for switching and the second gate allows for current limiting and protection.
The BCR135SH6327XTSA1 is a pre-biased device and eliminates the need for additional bias components. This allows for greater flexibility and reduced board space. The BCR135SH6327XTSA1 also offers improved EMI and ESD immunity, speeding up development.
The device is manufactured by Siemens, and is available in an industry-standard 4-pin TO-92 package, making it easy to integrate into existing products. Additionally, the BCR135SH6327XTSA1 offers a high degree of integration and low thermal resistance, allowing the device to run cooler and more efficiently.
The BCR135SH6327XTSA1 is an excellent choice for power switching applications that require low current and high switching frequencies. It offers a high degree of integration and low thermal resistance, making it an ideal choice for linear and high frequency applications. The device is also pre-biased, eliminating the need for additional components, and is mounted in an industry-standard 4-pin TO-92 package.
The specific data is subject to PDF, and the above content is for reference
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