BCR141E6433HTMA1

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Transistors - Bipolar (BJT) - Single, Pre-Biased

BCR141E6433HTMA1 is a PNP pre-biased transistor, designed to exceed its performance targets in high voltage and current transfer applications. A major strength of this device is the built-in collector-base bias resistor that guarantees an optimal bias voltage and current value for the collector-base junction. This built-in pre-biased transistor makes it ideal for mediating transistor current flow and allowing for effective current transfer.

The BCR141E6433HTMA1 device is equipped with a wide range of features to ensure efficient and precise performance. It has a collector-emitter voltage breakdown rating of 175V and a power dissipation of 0.8W. The package is equipped with an insulated metal-oxide-semiconductor (MOS) gate for high-speed switching and an emitter-base zener diode to guard against voltage spikes. Additionally, it is designed with a simplified input-output base structure, which makes it ideal for applications that require precise current regulation and rapid response.

Working Principle

At its core, BCR141E6433HTMA1 is a PNP-type transistor and functions like any other transistor. It is operated using an electric potential applied at its collectors, with the current between the two flowing through the junction between them and the base. The applied potential determines the amount of current flowing through the transistor and the base voltage. Depending on the amount of current flowing through the base and the collector-base voltage, the transistor will turn on or off.

When the applied potential allows sufficient current to enter the base, the transistor will be “turned-on” and allows current to pass from the collector to the emitter. This is referred to as the “on-state” for the transistor. Conversely, when the applied potential does not allow sufficient current to enter the base, the transistor will be “turned-off”, effectively blocking the flow of current between the collector and the emitter. This is referred to as the “off-state” for the transistor.

The major benefit of using BCR141E6433HTMA1 is the built-in collector-base bias resistor. This built-in resistor ensures that any current passing through the transistor is biased in a precise manner and allows for effective current transfer. This makes it ideal for applications that require precise control over the current passing through the transistor. Additionally, the easy to use input-to-output base structure simplifies the user experience, allowing anyone to make quick and high-precision selector gate connections.

Application Field

BCR141E6433HTMA1 is ideal for applications that require precise current regulation and high-performance switching. The included MOS gate and emitter-base zener diode make it suitable for high-voltage and high-current transfer. It is commonly used in communication systems, power amplifiers, automotive electronics, and digital circuits.

Due to its high voltage and current transfer capabilities and precise current regulation abilities, BCR141E6433HTMA1 is an ideal transistor for a variety of applications. Its ease of use and built-in pre-biased resistor make it suitable for engineering projects that require precise current regulation and rapid response.

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