Allicdata Part #: | BCR148SE6433HTMA1TR-NDTR-ND |
Manufacturer Part#: |
BCR148SE6433HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | BCR148SE6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR148S |
Supplier Device Package: | PG-SOT363-6 |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR148SE6433HTMA1 is a pre-biased[] array of transistors from the Transistors - Bipolar (BJT) family. This array is composed of two independent high current devices in a single package, which offers a number of advantages over two discrete parts. The package is designed to provide excellent thermal performance, and its capability for multichip solutions dramatically reduces the size and the cost of assembly.
The BCR148SE6433HTMA1 has an emitter-current rating of 1.2A and an integrated switched emitter-shunt resistor of 1.3kΩ. It has a typical on-resistance of 0.95Ω and a collector-current rating of 3.2A. The array has a VCE(on) of 16V, and it handles up to 50V of collector-emitter voltage. This device is suitable for applications in which higher current-pulse and improved thermal performance are required.
BCR148SE6433HTMA1 can be used in a wide variety of applications, such as automotive audio amplifiers, consumer audio amplifiers, power supplies, and power converters. It is ideal for use in systems where size, ease of assembly, and thermal management are a priority. The device can easily be employed in more complicated layouts, such as those associated with multi-channel audio amplifiers, where the reduced space and improved electrical performance enabled by a single package can provide increased user value.
The BCR148SE6433HTMA1’s working principle is based on two independent transistors. By transferring a portion of the output current from one of the transistors to the other, the device is able to reduce the power dissipation in the single operating transistor while maintaining the overall current handling capability. Furthermore, this transfer of current allows the device to achieve faster switching, due to the reduced current changing in the transistor.
The device\'s thermal management capabilities are also improved by its dual-transistor design. As the package size is smaller, both the thermal resistance and the thermal capacitance of the device are lower. This allows the device to better dissipate the heat generated by the device to the surrounding circuit board, which helps to maintain the device\'s temperature even in high-power or high-temperature applications.
BCR148SE6433HTMA1’s integrated emitter-shunt resistor, along with the high-voltage and high-current ratings, make it suitable for a variety of automotive, consumer, and industrial applications. The integrated emitter-shunt resistor reduces EMI radiation when the transistor is driven with AC signals, as the resistor absorbs unwanted RF energy and prevents it from being propagated in the circuit. The device can also be used in LCD back-lighting and touch screen applications, where the combination of the short switching times, compact size and improved thermal performance can give users a better overall performance.
In conclusion, the BCR148SE6433HTMA1 array of transistors provides an economical, efficient and versatile solution for both power and audio applications. It is suitable for a wide variety of designs, from traditional through to complex designs, and its integrated emitter-shunt resistor along with its high-voltage and current ratings makes it an ideal choice for EMI sensitive applications. Moreover, its unique design enables improved thermal performance, helping to ensure that the device can operate without any thermal issues.
The specific data is subject to PDF, and the above content is for reference
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