BCR183SE6433BTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	200MHz
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6

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BCR183SE6433BTMA1 is a pre-biased transistors - bipolar (BJT) - arrays. It is designed to offer excellent breakdown voltage and reliability.The BCR183SE6433BTMA1 is a direct device that can be used in the fields of power supply control, high voltage power conversion and control, low voltage high current, mixed signal, and circuit switching. Its application mainly evolves around applications that require high breakdown voltage and good reliability.The BCR183SE6433BTMA1 has a low on-resistance of only 170mΩ which makes it ideal for current switching applications. In terms of its power switching capacity, it utilizes a short delay time of 3.5ns with 8dB gain, allowing quick response to fast-changing current signals. Its high-isolation voltage of 645V and peak voltage strength of 320V makes it suitable for applications dealing with high voltage of 64V and beyond. The BCR183SE6433BTMA1 employs a Brown-out and auto-recovery circuit protection to ensure that the device stays in protective state in case of power supply failure. It also features a power saving design and a thermal shutdown circuit to prevent the device from overheating.The working principle of BCR183SE6433BTMA1 is pretty straightforward. It utilizes a NPN type transistor which consists of a P-type base, an N-type emitter and an N-type collector. The emitter is the output terminal of the device, and the collector is the input terminal. When there is no voltage present at the collector, the transistor is said to be off, i.e. it is non-conducting. When a small base current is applied, the transistor starts to conduct current between the emitter and collector, allowing current to flow through the device. This phenomenon is known as base current modulation.The BCR183SE6433BTMA1 is an effective pre-biased transistors - bipolar (BJT) - arrays which can be used in the fields of power supply control, high voltage power conversion and control, low voltage high current, mixed signal and circuit switching. It features excellent breakdown voltage, low on-resistance, power saving design, thermal shutdown circuit, and Brown-out and auto-recovery circuit protection. The working principle of the device is based on the concept of base current modulation using a NPN type transistor.

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