Allicdata Part #: | BCR198SH6327XTSA1TR-ND |
Manufacturer Part#: |
BCR198SH6327XTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | BCR198SH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
18000 +: | $ 0.03239 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 190MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: | PG-SOT363-6 |
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BCR198SH6327XTSA1 is a pre-biased array of currently available Bipolar Junction Transistors (BJTs) from Panasonic. It is a three-terminal NPN transistor array designed for fast switching, wideband communications applications and high-voltage operation. The device operates in a number of configurations, allowing it to be used for many different types of applications.
Typical applications for the BCR198SH6327XTSA1 include switching, interfacing and amplifier circuits, particularly for high performance audio and video applications, and power amplification in RF circuits. The device also has a range of secondary applications including high-speed switching, power conversions, and driving of motors or relays. The pre-biased transistor array offers high voltage and current capabilities and an extended frequency range, making it an ideal choice for applications where high reliability, speed and performance are required.
Working Principle
The array consists of three bipolar transistors, each having a single emitter and a single collector. The transistors are internally connected, so that the emitter of one transistor is connected to the collector of another transistor, and the emitter of the third transistor is connected to the base of the first. The base of each transistor is connected externally to a bias voltage allowing for independent control of the collector current for each transistor. This allows for high current and voltage capabilities, making the array suitable for high power applications.
The BCR198SH6327XTSA1 provides a small footprint, with a total packaging size of 8.0mm by 8.0mm and a height of 2.5mm. It is designed for use in breadboard applications, and can be mounted either horizontally or vertically thanks to its versatile package design. The small size also makes it suitable for applications where space is limited.
The array is constructed in an IC format, including the three transistors and two external bias controls, providing a cost-effective solution to the complex circuit design of a discrete 3-transistor configuration. This makes it easy to configure and use, while still providing the high performance, reliability and flexibility of a pre-biased transistor array.
Conclusion
The BCR198SH6327XTSA1 from Panasonic is a versatile pre-biased array of three Bipolar Junction Transistors (BJTs), designed for fast switching, wideband communications and high-voltage operation. The device offers small form factor, high current and voltage capabilities, and a cost-effective solution for applications that require high performance, reliability and flexibility. The BCR198SH6327XTSA1 is an ideal choice for power amplification in RF circuits, high speed switching, power conversion and driving of motors or relays.
The specific data is subject to PDF, and the above content is for reference
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