BCR22PNE6327BTSA1

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BCR22PN series are Pre-Biased Transistors Arrays manufactured by ROHM semiconductor. The BCR22PNE6327BTSA1 is a part of the ROHM BCR22SMT Series which consists of NPN silicon pre-biased transistors integrated into a single unit. BCR22PNE6327BTSA1 can be used in three different configurations with the aid of built-in bias resistors: Common Emitter configuration, Common Base Configuration and Common Collector configuration.

The device consists of a pair of NPN transistors in a single easy-to use package. It has a collector current of up to 700mA and a collector-emitter voltage of up to 250V. The maximum power dissipation of the BCR22PNE6327BTSA1 is 600mW. The BCR22PNE6327BTSA1 is RoHS (Lead Free) compliant and suitable for mobile phone and other portable devices which need a smaller number of transistors.

The BCR22PNE6327BTSA1 is used in different application fields such as audio amplifiers, switching applications, automotive circuits, and relays. The pre-biased transistors provide simple, easy and cost-effective solutions for these applications. Some application examples of the BCR22PNE6327BTSA1 are voltage stabilizing circuits, pulse generators, and class A amplifiers. It can also be used in logic circuits as a switching device.

The working principle of a BCR22PN pre-biased transistor is based on the principle of biasing, and bias resistors are used to control the operating point of the device. The integrated bias resistors act as a current source, providing a fixed current to the base of the transistor. By controlling the base-emitter voltage, current gain is provided by the transistor at the output.

In a common-emitter configuration, an input voltage is applied to the base of the transistor. This input voltage causes a current to flow through the bias resistors, producing a base-emitter voltage for the transistor. The current then flows from the collector to the emitter and is amplified based on the transistor’s gain. In a common-base configuration, a voltage applied to the base of the transistor causes a current to flow from the collector to the base. The current then flows from the emitter to the collector and is amplified based on the gain of the transistor.

In a common-collector configuration, a voltage is applied to the emitter of the transistor. This creates a current in the bias resistor, which produces a base-emitter voltage. The current then flows from the base to the emitter and gets amplified by the transistor. The output voltage is then available at the collector.

The BCR22PNE6327BTSA1 offers an easy and cost-effective way to use pre-biased transistors in various applications. Its wide range of applications and easy-to-use configurations make it a suitable choice for both experienced and amateur users. Its RoHS compliant design ensures fewer environmental effects and a longer life.

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