BCR48PNE6433BTMA1 Allicdata Electronics
Allicdata Part #:

BCR48PNE6433BTMA1TR-ND

Manufacturer Part#:

BCR48PNE6433BTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN/PNP PREBIAS SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: BCR48PNE6433BTMA1 datasheetBCR48PNE6433BTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR48PN
Supplier Device Package: PG-SOT363-6
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 100MHz, 200MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms, 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 70mA, 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BCR48PNE6433BTMA1 is a pre-biased transistor array produced by STMicroelectronics (ST) and is useful for general purpose switching and signal applications. The BCR series of transistors are designed for switching, amplification, and signal processing. They are used in a variety of applications including cellular phones, wireless data links, and high frequency applications such as switching power supplies and high frequency signal processing.

The BCR48PNE6433BTMA1 is a NPN pre-biased transistor array. This type of transistor array consists of four individual NPN transistors connected in a single package, with each transistor having its own base and emitter connection. The base is biased by an internal resistor, thus decreasing the need for external components in many applications. Additionally, the transistors are configured in an ESD-free dual flat no-lead package, making them suitable for operation in harsher environments. The BCR48PNE6433BTMA1 also features a low voltage drop of 2.5V and a high current capacity of 130mA, making it suitable for many general-purpose switching and signal applications.

The working principle of the BCR48PNE6433BTMA1 is based on the basic transistor design. The two main components of a transistor are the base, controlled area of the transistor and the collector and emitter, which are current-carrying areas. In operation, the base controls the amount of current that can flow from the collector to the emitter. In the BCR48PNE6433BTMA1, the base is biased by an internal resistor and controls the amount of current that can flow through the individual transistors. As current passes through the transistors, it can be amplified, switched, or used in signal processing applications, depending on the configuration of the external components.

The BCR48PNE6433BTMA1 is typically used in the following applications: switching circuits, digital logic gates, radio frequency amplifiers, and sensing devices. It is also used in telecommunications, automotive electronics, and high-frequency applications such as switching power supplies, RF signal processing and high-frequency communications. This pre-biased transistor array also has applications in medical devices, consumer electronics, and industrial control systems.

The BCR48PNE6433BTMA1 is an excellent solution for many general-purpose switching and signal processing applications. Its pre-biased configuration and internal resistor reduce design time and costs, while its ESD-free dual flat no-lead package makes it suitable for operation in harsher environments. Additionally, its low voltage drop and high current capacity make it an ideal solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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