BCW29,215 Allicdata Electronics
Allicdata Part #:

BCW29,215-ND

Manufacturer Part#:

BCW29,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 32V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor PNP 32V 100mA 100MHz 250m...
DataSheet: BCW29,215 datasheetBCW29,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03079
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BCW29
Description

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Introduction

The BCW29,215 is a single bipolar junction transistor (BJT) that has a wide range of applications and a characteristic working principle. It is a small signal transistor with an NPN polarity that offers high frequency performance. It is designed to operate in both digital and analogue circuits, and can be found in portable radios and audio equipment.

Types of BCW29,215 Transistors

The BCW29,215 is an NPN bipolar junction transistor, which is the most common type of BJT. Other types of BJTs include the PNP type, which is a complementary type to NPN. The BCW29,215 is a general purpose beam lead transistor that is typically used in driver and audio amplifier circuits. It has a high gain-bandwidth product and a low input noise.

Features of BCW29,215 Transistors

The BCW29,215 has a variety of features that make it suited for its applications. It has an operating frequency range between 1MHz and 3MHz, depending on the application. It also has a low input capacitance, which makes it suitable for high frequency applications. Its maximum current gain is 80, and its maximum collector current is 800mA. The BCW29,215 also features a high fT/fmax ratio of 7.5, a low collector-emitter voltage of 1V, and a low output capacitance of 0.4pF. The transistor is available in a variety of packages, such as a surface-mount, TO-92, TO-226 and a tape and reel package.

Applications of BCW29,215 Transistors

The BCW29,215 is typically used in many types of audio and video applications, such as portable radios and television sets. It can also be used in high frequency amplification circuits, audio amplifiers, and power supplies. The BCW29,215 can be used in digital circuits such as logic gates and pulse generators, and analog circuits such as amplifiers and filters. The transistor is also well-suited to use in RF amplifiers and oscillators, wireless communication systems, and in switch mode power supplies.

Working Principle of BCW29,215 Transistors

The BCW29,215 operates on the principle of the bipolar junction transistor. It consists of three layers of semiconductor material, which are the base, collector and emitter. When a voltage is applied to the base-emitter junction, it allows current to flow from the collector to the emitter. This current flow can be controlled by varying the voltage applied to the base. The current gain of the transistor is determined by the ratio of current flowing from the collector to the current flowing from the emitter. The current through the transistor is controlled by the amount of current that flows into the base of the transistor, which is inversely proportional to the base current. The current gain of the transistor is then determined by the base current and the ratio of the collector current to the emitter current.

Conclusion

The BCW29,215 is a single bipolar junction transistor (BJT), designed to operate in both digital and analogue circuits. It has an NPN polarity and is typically used in portable radios, audio equipment and video applications. It features a wide range of operating frequencies and a maximum current gain of 80, and is well-suited for high frequency amplification circuits, audio amplifiers and power supplies. The transistor works on the principle of the bipolar junction transistor, and the current gain is determined by the ratio of current flowing from the collector to the current flowing from the emitter.

The specific data is subject to PDF, and the above content is for reference

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