BCX19_D87Z

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The development of semiconductor technology spurred the inventions of improved transistors in the 1950s and 1960s, resulting in the advances in the availability of transistors in the market.

BCX19_D87Z transistors are known as single-component transistors, specifically in the classification of bipolar junction transistors. Single-component transistors are third-generation semiconductor structures consisting of two p-n junctions.

The acronym for this specific transistor denotes the structural orientation of the output, collector, and base junctions of the transistor, namely the Box, Speed, and Drift type configurations, respectively.

BCX19_D87Z transistors are designed for applications requiring high-current drive and switching, as well as high-frequency operation. The base-collector electrical input-output characteristics of this transistor enable a variety of applications.

The maximum specified collector-emitter (CE) voltage of the BCX19_D87Z transistor is 250V. Its collector current rating is at 0.3A and its Pd rating is at 400 mW. Its base-emitter (BE) forward voltage is set at 0.6V, while its maximum collector-base reverse voltage sits at 4V.

The statistical gain of the BCX19_D87Z transistor is 1.8. Its transition frequency is rated at >200MHz, meaning it operates at much higher frequencies and is most suitable as a high-frequency device. Its maximum collector-emitter saturation voltage is set at 0.1V.

The BCX19_D87Z transistor is an NPN-type transistor, meaning it is designed for high-current amplification, switching, and oscillating. Its primary application area is for high-frequency and large-signal amplification applications, such as audio power amplifiers, oscillators, and any other higher frequency application.

Another key feature of the BCX19_D87Z transistor is its high-frequency cut-off performance. It has a robust package structure, which allows it to provide high-speed switching, as well as contributes to its high-frequency operation.

The primary working principle of the BCX19_D87Z transistor is based on the operation of two NPN-junction transistors in a co-planar configuration. The NPN-junction transistors are connected together such that one of the transistors form the base and the other forms the collector.

The two NPN-junction transistors are electrically integrated, forming a network that provides current amplification based on its input and output voltages. The NPN-junction transistors are connected in series, allowing current to flow from the base to the collector and vice versa.

The BCX19_D87Z transistor works by modulating its resistance based on the voltage applied to its base. At higher voltages, the resistance drops due to the saturation of the NPN-junction transistors, which in turn increases the current flowing from the collector to the base and vice versa.

The BCX19_D87Z transistor is popular for its high-speed switching capabilities, as well as its high-frequency cut-off performance. The NPN-junction transistors forming the integrated network of the transistor contribute to its high-speed switching and high-frequency performance due to their unique characteristics.

The BCX19_D87Z transistor is an ideal choice for applications such as high-frequency amplifiers, oscillators, audio power amplifiers and other high-frequency applications that require high-current drive, switching and performance.

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