BCX42E6433HTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	125V
Vce Saturation (Max) @ Ib, Ic:	900mV @ 30mA, 300mA
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 1V
Power - Max:	330mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BCX42

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BCX42E6433HTMA1 is a type of single, bipolar junction transistor (BJT). It is mainly used in matching and high power applications, such as automotive, industrial, telecommunication and consumer electronics. In this article, we will discuss the application field and working principle of BCX42E6433HTMA1.Application FieldBCX42E6433HTMA1 is mainly used in various matching and high power applications. It is suitable for applications operating at frequencies up to 4GHz. It is also suitable for applications operating at medium to high power levels up to 40W. The BCX42E6433HTMA1 is mainly used in automotive, industrial, telecommunication and consumer electronics. In automotive applications, it can be used to implement power control, signal amplification and signal conditioning. In industrial applications, it can be used to implement signal conditioning, signal amplification and power control. In telecommunication applications, it can be used to implement signal conditioning and power control. In consumer electronics, it can be used to implement signal conditioning, signal amplification and power control.Working PrincipleBCX42E6433HTMA1 is a type of single, bipolar junction transistor (BJT). It is a three terminal semiconductor device consisting of an emitter, a base and a collector. The base plays an important role as it is used to control the current that flows from the emitter to the collector. The base is biased with a dc voltage and when a signal voltage is applied to it, the current flowing from the emitter to the collector changes correspondingly. This is the working principle of the BCX42E6433HTMA1.The BCX42E6433HTMA1 is mainly used in various matching and high power applications. It has many advantages such as low gain, high collector efficiency, high power and high reliability. It also has good matching performance and low thermal resistance. The BCX42E6433HTMA1 is also capable of achieving stable and high gain over a wide frequency range.In conclusion, BCX42E6433HTMA1 is a type of single, bipolar junction transistor (BJT). It is mainly used in various matching and high power applications. It is suitable for applications operating at frequencies up to 4GHz and power levels up to 40W. It has many advantages such as low gain, high collector efficiency, high power and high reliability. It also has good matching performance and low thermal resistance. The BCX42E6433HTMA1 is a versatile device and is suitable for a wide range of applications.

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