BCY59-IX Allicdata Electronics
Allicdata Part #:

BCY59-IX-ND

Manufacturer Part#:

BCY59-IX

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: THROUGH-HOLE TRANSISTOR-SMALL SI
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 150MHz 1W T...
DataSheet: BCY59-IX datasheetBCY59-IX Datasheet/PDF
Quantity: 1000
2000 +: $ 0.58047
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 630 @ 10mA, 1V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Description

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The BCY59-IX is a single-channel, very high speed, general-purpose bipolar junction transistor (BJT). This type of transistor is commonly used in the automotive, consumer and industrial electronics industries. Its main features include low collector-emitter saturation voltage, low power dissipation, easy drive and logic compatibility, very high speed switching capability and excellent performance over temperature. The BCY59-IX is suitable for applications such as logic level conversion circuits, high speed buffer amplifiers, and voltage amplifiers.The BCY59-IX is a NPN (Negative-Positive-Negative) junction transistor, which means it has three terminals: the base, collector and emitter. When the base-emitter voltage exceeds the forward-bias voltage, electrons from the emitter can travel through the base towards the collector and create a flow of collector current. This flow of collector current changes the base current, which in turn influences the voltage drop across the collector-emitter junction.The operation of the BCY59-IX follows the same principles as other BJTs, but its main advantage comes from its very high speed switching capability. It is much faster than many other BJTs, allowing it to be used in applications where speed is paramount. This speed increases its use in logic level conversion circuits, high speed buffer amplifiers, and voltage amplifiers.The BCY59-IX has a maximum collector current of 10 mA, a maximum collector-emitter voltage of 200 V, and a maximum base-emitter voltage of 7 V. It also has a thermal resistance of 25°C/W. Its small junction capacitances make it ideal for high speed switching applications, while its low power consumption ensures that it is energy efficient.The BCY59-IX is also relatively easy to drive as its base current can be determined by applying suitable voltage to its base terminal. Furthermore, it is logic compatible, meaning it can be used for logic-level conversion circuits or digital logic gates. Its high speed switching capability also makes it compatible with modern electronic systems such as digital communication protocols.In terms of safety, the BCY59-IX has a high dielectric strength, meaning it can tolerate high voltages and currents. It also has a high forward-bias voltage and requires very little electrical current. This makes it useful for applications such as motor control circuits, as it can help reduce the use of large amounts of electricity and also provide better protection for internal components.Overall, the BCY59-IX is an ideal choice for applications where high speed switching is required. Its features, such as its low power consumption, logic capability, and low capacitances make it perfect for those applications. It is also a reliable and durable device, which makes it a great choice for the automotive, consumer and industrial electronic industries.

The specific data is subject to PDF, and the above content is for reference

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