BD1LB500FVM-CGTR Allicdata Electronics
Allicdata Part #:

BD1LB500FVM-CGTR-ND

Manufacturer Part#:

BD1LB500FVM-CGTR

Price: $ 0.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IN-VEHICLE 1CH LOW SIDE SWITCH,
More Detail: N/A
DataSheet: BD1LB500FVM-CGTR datasheetBD1LB500FVM-CGTR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.27077
Stock 3000Can Ship Immediately
$ 0.29
Specifications
Voltage - Load: --
Supplier Device Package: 8-MSOP
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Over Current, Over Temperature, UVLO
Features: --
Input Type: CMOS
Rds On (Typ): 300 mOhm
Current - Output (Max): 1mA
Voltage - Supply (Vcc/Vdd): 3.5 V ~ 5.5 V
Series: Automotive, AEC-Q100
Interface: --
Output Type: P-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BD1LB500FVM-CGTR Application Field and Working Principle

BD1LB500FVM-CGTR is a type of Power Management Integrated Circuit (PMIC) which belongs to the power distribution switches, load drivers family. It is a two-input/two-output power switch for load-driving devices. It features a Common Gate FET (CGFET) technology to achieve low voltage rating, low impedance, and high thermal resistance combined with great transistor gain.

Application Field

BD1LB500FVM-CGTR is applicable to a variety of applications including general-purpose load-driving, general-purpose power distribution, automotive applications, and many others.The main feature of this PMIC is its high power efficiency, enabling designers to easily implement power distribution solutions for their products. Its low voltage and low impedance characteristics are well suited for many consumer applications. It is also suitable for automotive applications due to its low thermal resistance and fast response time.

Working Principle

The working principle of BD1LB500FVM-CGTR is based on a Common Gate FET (CGFET) technology. It is composed of an input P-channel MOSFET and an output N-channel MOSFET. These two devices are connected in parallel to form an inverting power switch. The control signal is applied to the gate of the input P-channel MOSFET. When the input signal is low, the gate of the input MOSFET is biased low and the switch is disabled. When the input signal is high, the gate of the input MOSFET is biased high and the switch is enabled, allowing current to flow from the output N-Channel MOSFET to the load. Thus, the PMIC power switch is enabled by the control signal and disabled by the lack of the control signal.

BD1LB500FVM-CGTR uses a low voltage rating, low impedance, and high thermal resistance combined with great transistor gain to achieve high power efficiency, making it suitable for power distribution of a variety of products.

The specific data is subject to PDF, and the above content is for reference

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