BD250B-S Allicdata Electronics
Allicdata Part #:

BD250B-S-ND

Manufacturer Part#:

BD250B-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP 80V 25A
More Detail: Bipolar (BJT) Transistor PNP 80V 25A 3W Through H...
DataSheet: BD250B-S datasheetBD250B-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Power - Max: 3W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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The BD250B-S is a single component, bipolar transistor that is commonly used in a variety of electronic circuit and chip designs. Designed and manufactured by the industry leader in transistors, the BD250B-S has become the go-to choice for many designers and engineers. This component is specially designed to be efficient, reliable and easy to integrate into a variety of circuit applications. In this article, we will discuss the BD250B-S\'s application field and working principle.

The BD250B-S is primarily used in the audio amplifier and electronic load applications. This component has the capability to output a high amount of current while also providing impedance control and noise suppression. Due to its tight control over impedance, the BD250B-S is ideal for use in high-quality audio amplifier circuits. Additionally, its reliable performance has made it the choice for many circuit designs that need to support a variety of heavy electrical loads.

In terms of its working principle, the BD250B-S utilizes a bipolar transistor structure. This structure is composed of three terminals: Base, Emitter, and Collector. The Base terminal works as the control unit, while the Collector and Emitter terminals are used to either capture or send current. Due to the fact that the Base is used to control the current flow, the BD250B-S is capable of amplifying the current from the Emitter and Collector. By using this amplifier technique, the BD250B-S can generate the required output current for the device connected to it.

The BD250B-S also uses a gain-bandwidth product (GBP) to measure the power of its current output. The GBP is a measure of the device\'s current output capability, which can be used to compare it to other components. With a GBP of 200 MHz, the BD250B-S can achieve a high efficiency of current amplification on almost any device or circuit. This makes the BD250B-S an ideal choice for many applications.

The BD250B-S is one of the most reliable and efficient single, bipolar transistors in the electronics market. Its application field and working principle have made it the go-to choice for many designers and engineers. With its high current output capability, tight control over impedance and noise suppression, and highly efficient amplifier technique, the BD250B-S can be used in a variety of circuit and chip designs. Its high GBP makes it one of the most powerful transistors on the market, making it a great choice for many complex and demanding designs.

The specific data is subject to PDF, and the above content is for reference

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