BD787

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 800mA, 4A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 3V
Power - Max:	15W
Frequency - Transition:	50MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-225AA

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Introduction

The BD787 is a PNP-type bipolar junction transistor (BJT), or field-effect transistor (FET). It is one of the most widely used transistors in the world. The primary purpose of the BD787 is for general purpose applications, but it is also used in power management, audio amplification, switching, and linear applications.

Basic Features of the BD787

The BD787 has a collector-emitter voltage of -60V, an emitter-base saturation voltage of -5V, a collector-base saturation voltage of -2V, and a forward current gain of 300. It also has a high-frequency response of up to 250MHz. The operating temperature of the BD787 ranges from -55°C to +150°C. Additionally, the BD787 is rated at 1A of collector current and up to 125mW of power dissipation.

Applications and Benefits of the BD787

The BD787 provides a low-cost solution for most general-purpose applications. It has been used as a switching element in many audio applications such as amplifiers, processors, and power supplies. The BD787 is capable of providing fast switching speeds and low-noise performance. Additionally, it is ideal for low-power applications, as it has a low forward collector-emitter saturation voltage. The BD787 can also be used in power management applications. It is well-suited to power supply design because of its low on-resistance and high frequency response. In addition, the BD787 is useful for control and protection applications due to its low forward saturation voltage.

Working Principle of the BD787

The BD787 is a PNP-type BJT. This means that the current flow from the collector to the emitter is controlled by the base-emitter voltage, with the collector and emitter being of opposite polarity. This type of transistor behaves similar to a switch. In the “on” state, the device is able to conduct current between the collector and emitter, and in the “off” state, it is able to block current flow. The BD787 is typically used in the common-emitter configuration. In this configuration, the base is the input, the collector is the output, and the emitter is the common terminal. The voltage at the base controls the amount of current flow from the collector to the emitter, as it affects the base-emitter junction voltage. The current gain of the BD787 is determined by the ratio of the collector current to the base current. This is known as the DC current gain, and is typically expressed in terms of the hfe value. The hfe value is the ratio of the collector current to the base current, and the higher the hfe value, the higher current gain the transistor will have.

Conclusion

The BD787 is a widely used PNP-type BJT. It has a collector-emitter voltage of -60V, an emitter-base saturation voltage of -5V, a collector-base saturation voltage of -2V, and a forward current gain of 300. The BD787 is typically used in applications such as power supply design, audio amplification, and control and protection. It is well-suited for low-power applications due to its low forward saturation voltage. The working principle of the BD787 is based on the common-emitter configuration, and its DC current gain is determined by the hfe value.

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