BD809G

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.1V @ 300mA, 3A
Current - Collector Cutoff (Max):	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 4A, 2V
Power - Max:	90W
Frequency - Transition:	1.5MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

The BD809G is a single bipolar junction transistor (BJT). It is one of the more advanced types of BJTs and offers more precise control, more efficient heating, and a wider range of applications. In this article, we will discuss the application field and working principle of the BD809G.

Application Field

The BD809G has many applications, but its primary purpose is in sensitive electrical control circuits. It is often seen in applications such as adjustable frequency amplifiers, precision current-regulating circuits, and power-conversion circuits. It can also be used as the main switching element for high-efficiency, high-power applications such as UPS systems, switch mode power supplies, and motor controllers.

Working Principle

TheBD809G is a type of BJT called a depletion-mode device. It operates by having a layer of positively charged atoms (called holes) between two layers of electrons. The amount of current that is allowed to flow through the device can be changed by altering the voltage applied to the base of the transistor.When the voltage on the base of the BD809G is low, the holes are forced into the base, reducing the flow of electrons. This reduces the amount of current flowing through the transistor and results in a decrease in the output current. Conversely, when the voltage on the base of the BD809G is high, the holes are pulled away from the base, allowing more electrons to flow through the transistor and increasing the output current.

Conclusion

The BD809G is an advanced bipolar junction transistor that boasts precise control, efficient heating, and wide application range. It is often used as the main switching element in high-efficiency, high-power applications and in sensitive electrical control circuits. Its working principle involves controlling the flow of current through the device with the help of a voltage applied to the base of the transistor.

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