BDC01DRL1G Allicdata Electronics
Allicdata Part #:

BDC01DRL1G-ND

Manufacturer Part#:

BDC01DRL1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 100V 500mA 50MHz 1W T...
DataSheet: BDC01DRL1G datasheetBDC01DRL1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Description

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Introduction

The BDC01DRL1G is a part of a family of single, bipolar junction transistors (BJT) that are utilized in a variety of applications. These components feature low on-resistance and a small gate-to-drain capacitance, making them well-suited for many types of functions. This article outlines the various application fields for BDC01DRL1G transistors, as well as discussing its basic working principle.

Applications

The BDC01DRL1G can be used in a wide variety of applications due to its low on-resistance and small gate-to-drain capacitance. It can be used for power management, load switches, and gate drivers, as well as more specific applications such as motor control and power supply sequencing.

Its small gate-to-drain capacitance allows the BDC01DRL1G to be used in high-speed switching, such as power MOSFET gate drivers and high-side switches. The component\'s low on-resistance also makes it suitable for synchronous rectifier, DC-DC and DC-AC converters. In addition, the component can be used in Class D audio and in current-sensing applications.

Working Principle

The BDC01DRL1G is a single, n-channel junction power MOSFET transistor. It has an unipolar structure and an insulated gate, which allows the component to be driven with a small voltage pulse. In operation, a positive voltage is applied to the gate which causes a negative charge to be built up and repel the p-channel MOSFET carriers. This in turn reduces the resistance between the drain and source and allows current to flow. The BDC01DRL1G also has a reverse body diode, which allows it to block and dissipate energy.

Conclusion

The BDC01DRL1G power MOSFET transistor is an integral component for many types of applications. With its low on-resistance and small gate-to-drain capacitance, it is well-suited for use in high-speed switching, power management, load switches, gate drivers, synchronous rectification, and other applications. Its basic working principle is based on the application of a voltage to an insulated gate, which causes a negative charge to build up and lower the resistance between the drain and source, allowing current to flow.

The specific data is subject to PDF, and the above content is for reference

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