BF199_J35Z Allicdata Electronics
Allicdata Part #:

BF199_J35Z-ND

Manufacturer Part#:

BF199_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 25V 50MA TO-92
More Detail: RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Ho...
DataSheet: BF199_J35Z datasheetBF199_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BF199
Description

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The BF199_J35Z is a type of bipolar transistor most commonly used in RF (Radio Frequency) applications. It is used to perform a wide range of tasks, ranging from amplification of signals to switching at high frequencies.

A Bipolar Junction Transistor (BJT) is a type of transistor that is composed of three terminals, or "junctions", making up the transistor. These junctions are known as the emitter, the base, and the collector. The transistor has a control voltage applied to the base terminal and this voltage controls the current flow from the emitter to the collector. When the base-emitter voltage is increased, the transistor is said to be in the "on" state, allowing current flow from the emitter to the collector. When the base-emitter voltage is decreased, the transistor is in the "off" state and no current is able to flow from the emitter to the collector.

The BF199_J35Z is known as an NPN transistor, meaning that the transistor is composed of an N-type semiconductor material (the emitter) and two P-type semiconductor materials (the base and the collector). The emitter is the source of current, the collector is the destination of the current and the base is the control. When a positive voltage is applied to the base, it attracts electrons from the emitter and they recombine in the collector. This allows current to flow from the emitter to the collector. Conversely, when the base voltage is removed or dropped below a certain threshold, the transistor is "off" and no current is able to flow.

The BF199_J35Z is a value addition part in the field of RF application due to its low noise and high frequency response up to 500 MHz. This effectively allows for better transmission of signals over large distances and reduces interference from outside sources. It also has a low collector-emitter capacitance and low base-emitter capacitance, leading to faster switching speeds and less power consumption.

The BF199_J35Z is ideal for a wide range of applications, including but not limited to modulators, switching, buffers, and amplifiers. It is especially ideal for applications wherein high-speed operation, low power consumption, and high signal fidelity are required. The BF199_J35Z is a versatile component that can stand up to high temperatures and many other harsh conditions, allowing it to be used in a wide range of physical environments.

The BF199_J35Z can be found in many products in the market, including decoders, transceivers, antenna amplifiers, telephone switches, radio receivers, and other RF-related equipment. This transistor is ideally suited for these applications due to its noise characteristics, wide frequency range, and low power consumption. The BF199_J35Z is also seen in many consumer electronics, including mobile phones, radios, and televisions.

In conclusion, the BF199_J35Z is an ideal component for a wide range of RF applications. Its low noise, high frequency response, low collector-emitter capacitance, and low base-emitter capacitance all make it ideal for a wide range of requirements. Its ability to stand up to high temperatures and other harsh conditions allows it to be used in many physical environments. The BF199_J35Z is a value addition component in the field of RF application.

The specific data is subject to PDF, and the above content is for reference

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