Allicdata Part #: | BF199,112-ND |
Manufacturer Part#: |
BF199,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 25V 0.025A SOT54 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 25mA 550MHz 500mW... |
DataSheet: | BF199,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 25mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 38 @ 7mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 550MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF199 |
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BF199,112 is a single-chip bipolar junction transistor (BJT) with low noise and wide dynamic range, designed as a general-purpose low-noise amplifier. It has a built-in emitter-follower output circuit and can be used as a single-ended amplifier or as an amplifier in a push-pull configuration. The transistor is manufactured using High Electron Mobility Transistor (HEMT) technology and is characterized by high frequency response, low noise figure, high gain and low power consumption.
The basic application of BF199,112 is as a low-noise amplifier. It can be used for amplifying signals in a wide frequency range including audio, video, broadband and sub-GHz signals. It is also suitable for high-sensitivity satellite radio receivers and low frequency signals from automotive radio receivers. The transistor can also be used in power amplifiers, low frequency oscillators, pulse-width modulators, polarization receivers and other circuits requiring low noise or high gain. In addition, it can be used as a driver for switching and relay circuits.
The working principle of BF199,112 is based on the operation of a normal BJT. A biasing voltage is applied to the base-collector junction which increases the current flow between the emitter and the base. The voltage across the emitter-collector junction follows the base-emitter voltage due to the properties of the BJT. This causes the current to increase further in the emitter-collector path and result in amplified signal. The same process is repeated for each cycle of input signal to get an output signal of higher amplitude. The gain of the transistor is determined by the biasing voltage.
The BF199,112 transistor is widely used in many low-noise amplifier circuits. It has an excellent noise figure, wide dynamic range and low power consumption making it ideal for high-sensitivity receiver applications. In addition, it is suitable for high-temperature operation and can be used in various circuits due to its high gain and frequency response. This makes the transistor a versatile device that provides excellent performance in many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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