BF799E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BF799E6327HTSA1TR-ND

Manufacturer Part#:

BF799E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR NPN RF 20V SOT-23
More Detail: RF Transistor NPN 20V 35mA 800MHz 280mW Surface Mo...
DataSheet: BF799E6327HTSA1 datasheetBF799E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: --
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BF799
Description

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Introduction

BF799E6327HTSA1 is a transistor manufactured by NXP Semiconductors. It is a Bipolar Junction Transistor (BJT)often used in RF (radio frequency) amplifiers and applications. Being a bipolar transistor, its three terminals are the collector, base, and emitter. It is mainly used for high-frequency power gain purposes.

Applications of BF799E6327HTSA1

The BF799E6327HTSA1 is mainly used for audio and radio frequency applications. It can provide high power gain at the radio frequencies from 525 MHz to 2100 MHz. This makes it suitable for usage in cordless telephones, mobile radio, and amateur radio applications. Furthermore, it can also be used as an amplifier in TV tuners, radio receivers, and FM/AM broadcast radio. With its high power gain performance, the BF799E6327HTSA1 can serve as a low noise amplifier, Preamplifier, and Oscillator-Driver amplifier.

BF799E6327HTSA1 Working Principle

The working principle of the BF799E6327HTSA1 is no different from other BJT transistors. The transistor consists of three terminals, the Base, Collector and Emitter. When current flows through the base terminal, it causes current to flow from the collector to the emitter terminals. This transistor is specifically designed to realize high power gain in RF signals from 525-2100 MHz, thus making it suitable for many applications. When current is applied to the base terminal, the current flow from collector to emitter suddenly increases, thus resulting in greater gain. This phenomenon is known as beta-current multiplication. The amount of current that can flow from collector to emitter is determined by the base current. The value of this current, also known as the Beta-current gain, can range from 50/50 to 200/200.

Conclusion

In conclusion, the BF799E6327HTSA1 is a bipolar junction transistor specifically designed to provide high power gain in radio frequencies from 525 MHz to 2100 MHz. It is mainly used in cordless telephones, mobile radio, and amateur radio applications. On top of that, it can also serve as a low-noise amplifier, preamplifier, oscillator-driver amplifier, and in TV tuners as well as radio receivers and FM/AM broadcast radio. The maximum current gain gains of this transistor lie within the range of 50/50 to 200/200.

The specific data is subject to PDF, and the above content is for reference

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