BF799WE6327BTSA1 Allicdata Electronics
Allicdata Part #:

BF799WE6327BTSA1TR-ND

Manufacturer Part#:

BF799WE6327BTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR NPN RF 20V SOT-323
More Detail: RF Transistor NPN 20V 35mA 800MHz 280mW Surface Mo...
DataSheet: BF799WE6327BTSA1 datasheetBF799WE6327BTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: --
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BF799
Description

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BF799WE6327BTSA1 is a bipolar junction transistor (BJT) specifically designed for use in radio frequency (RF) applications. It is ideal for use in linear amplification, power amplification, and switching, as well as in oscillator, mixer, and other RF circuits. This RF transistor is designed to provide superior performance while reducing its operating temperature, temperature coefficient, and power dissipation. This device features low noise and low power levels, making it an ideal choice for a variety of applications.

A bipolar junction transistor consists of three sections: the collector, the base, and the emitter. These sections are connected in a base-collector-emitter (BCE) configuration, with the base placed between the collector and the emitter. The base acts as a current-steering section, where the current from the emitter can be diverted to either the collector or the emitter. The collector is used to collect the current from the base, while the emitter is used to release the current.

The BF799WE6327BTSA1 uses an epitaxial layer in the collector region to improve its stability and reduce noise performance under dynamic input conditions. In addition, it features a low collector-base capacitance and a large base-contacted area to reduce the amount of power used when switching. This device also has a low thermal resistance, allowing it to operate at higher power levels while still allowing the junction temperature to remain low.

The BF799WE6327BTSA1 has a breakdown voltage of 100V and a maximum power dissipation of 1.3 watts. It can withstand up to a 50Vdc collector-emitter voltage drop, and operate over a wide temperature range from -55°C to +150°C. The device is available in both surface-mount and through-hole packages, allowing for a variety of mounting configurations to suit a range of application needs.

The BF799WE6327BTSA1 is an ideal choice for use in RF circuits due to its high gain and low power consumption. Its optimized design and improved performance make it suitable for linear, power, and switching applications. The device is also designed to be highly reliable and provides excellent heat dissipation, making it suitable for use in harsh environments.

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