Allicdata Part #: | BF799WE6327BTSA1TR-ND |
Manufacturer Part#: |
BF799WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 20V SOT-323 |
More Detail: | RF Transistor NPN 20V 35mA 800MHz 280mW Surface Mo... |
DataSheet: | BF799WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 800MHz |
Noise Figure (dB Typ @ f): | 3dB @ 100MHz |
Gain: | -- |
Power - Max: | 280mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BF799 |
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BF799WE6327BTSA1 is a bipolar junction transistor (BJT) specifically designed for use in radio frequency (RF) applications. It is ideal for use in linear amplification, power amplification, and switching, as well as in oscillator, mixer, and other RF circuits. This RF transistor is designed to provide superior performance while reducing its operating temperature, temperature coefficient, and power dissipation. This device features low noise and low power levels, making it an ideal choice for a variety of applications.
A bipolar junction transistor consists of three sections: the collector, the base, and the emitter. These sections are connected in a base-collector-emitter (BCE) configuration, with the base placed between the collector and the emitter. The base acts as a current-steering section, where the current from the emitter can be diverted to either the collector or the emitter. The collector is used to collect the current from the base, while the emitter is used to release the current.
The BF799WE6327BTSA1 uses an epitaxial layer in the collector region to improve its stability and reduce noise performance under dynamic input conditions. In addition, it features a low collector-base capacitance and a large base-contacted area to reduce the amount of power used when switching. This device also has a low thermal resistance, allowing it to operate at higher power levels while still allowing the junction temperature to remain low.
The BF799WE6327BTSA1 has a breakdown voltage of 100V and a maximum power dissipation of 1.3 watts. It can withstand up to a 50Vdc collector-emitter voltage drop, and operate over a wide temperature range from -55°C to +150°C. The device is available in both surface-mount and through-hole packages, allowing for a variety of mounting configurations to suit a range of application needs.
The BF799WE6327BTSA1 is an ideal choice for use in RF circuits due to its high gain and low power consumption. Its optimized design and improved performance make it suitable for linear, power, and switching applications. The device is also designed to be highly reliable and provides excellent heat dissipation, making it suitable for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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