Allicdata Part #: | 568-1646-2-ND |
Manufacturer Part#: |
BFM520,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN DUAL 70MA 8V 6TSSOP |
More Detail: | RF Transistor 2 NPN (Dual) 8V 70mA 9GHz 1W Surface... |
DataSheet: | BFM520,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 8V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.2dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
Base Part Number: | BFM520 |
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Introduction
The BFM520,115 is a bipolar junction transistor (BJT) that Rohm has developed for use in RF (radio frequency) circuits. It is a surface-mount device, primarily used for wireless communications. This type of transistor is used in a variety of applications, from military, medical, and industrial applications, to consumer electronics.
Application Fields
Notable application fields for the BFM520,115 include, but are not limited to, TV alignments, radios, cellular phones, satellite equipment, global positioning systems (GPS), and infant monitors. The BFM520,115 can also be used in RF systems where low noise is required. Additionally, due to its low turn-on resistance, it is frequently used in high-speed circuits or Class-C operation (receiver-like circuits). The BFM520,115’s low turn-on resistance further make it useful for detecting weak signals when used as a preamplifier. The device has an extremely low power consumption and a high gain, making it particularly well-suited for low-power applications.
The BFM520,115 is also frequently used in transceiver circuits thanks to its low power consumption, low noise and high gain levels.
Working Principle
The BFM520,115 consists of a single NPN type bipolar junction transistor. It has three terminals for its projection system, namely the emitter, base, and collector. The main principle of operation is basically the same as the operation of any other BJT; current flow between the emitter-base junction is regulated by the voltage at the base. The base-collector junction works in the opposite way, in which current between the two junctions is regulated by the voltage at the collector.
The BJT also relies on the PNP transistor to regulate and control the overall current between the junctions. The NPN transistor is seen as the more important component of the BJT, as it is the active part of the transistor. When the NPN transistor has current switching through it, the PNP transistor acts as the passive component, regulating and controlling the overall current between the junctions.
Conclusion
In conclusion, the BFM520,115 is a bipolar junction transistor (BJT) that is used in RF (radio frequency) circuits. It is a surface-mount device, primarily used for wireless communications. It has a wide range of applications and is used in TV alignments, radios, cellular phones, satellite equipment, GPS, infant monitors, and transceiver circuits. It has a low power consumption and high gain, making it ideally suited for low-power applications. The device consists of a single NPN type bipolar junction transistor, and its operation is based on the principles of current flow between the emitter-base junction being regulated by the voltage at the base, and the base-collector junction working in the opposite way, with current between the two being regulated by the voltage at the collector.
The specific data is subject to PDF, and the above content is for reference
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