BFN38E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BFN38E6327HTSA1TR-ND

Manufacturer Part#:

BFN38E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 300V 0.2A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 300V 200mA 70MHz 1.5W...
DataSheet: BFN38E6327HTSA1 datasheetBFN38E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Power - Max: 1.5W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Description

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The BFN38E6327HTSA1 is a single Bipolar Junction Transistor (BJT). The BJT is a three layer semiconductor device that is commonly used for switching and amplifying electrical circuits. It is used primarily in analog circuits and can be found in a wide range of consumer electronics such as televisions, radios, computers and telephone sets. A BJT consists of a base, an emitter and a collector, and the greater the number of BJTs used in a circuit the more complex the operation of the circuit.

A BJT works by negative-feedback biasing, with the base-emitter junction being forward biased and the collector-base junction being reverse biased. The forward bias of the base-emitter junction causes current to flow between the emitter and the collector. A positive potential applied to the base terminal increases the conductivity of the base-emitter junction, thus allowing more current to flow through the emitter-collector junction. This current flow is modulated by the voltage applied to the base terminal. The current between the collector and the emitter is amplified by the ratio of the base current divided by the collector current.

In addition to switching and amplifying, BJTs can be used for numerous other applications. Primarily, BJTs are used in digital circuits, such as logic gates and memory cells in computers, for switching application due to their fast switching times. They are also used in analog circuits for signal processing, such as in amplifiers and oscillators. In regards to the BFN38E6327HTSA1, it is commonly used in the field of industrial or consumer automation, due to its robust design and low noise operation.

The BFN38E6327HTSA1 has many features that make it a suitable BJT for use in automation. Firstly, it is temperature compensated, which makes it suitable for use in automated systems that operate in high ambient temperatures. Its high speed makes it ideal for digital switching applications, as well its low noise operation when used in analog circuits. Additionally, it has a power rating of up to 15W, which makes it suitable for high power applications.

The BFN38E6327HTSA1 is an excellent choice for applications in the field of industrial and consumer automation, as it offers high speed switching, low noise operation and temperature compensation. Moreover, its robust design, low power consumption and high power rating make it ideal for use in a wide range of applications, from digital signals and logic gates to amplifying and oscillating circuits.

The specific data is subject to PDF, and the above content is for reference

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