BFP840FESDH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BFP840FESDH6327XTSA1TR-ND

Manufacturer Part#:

BFP840FESDH6327XTSA1

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC TRANSISTOR RF NPN TSFP-4
More Detail: RF Transistor NPN 2.6V 35mA 85GHz 75mW Surface Mou...
DataSheet: BFP840FESDH6327XTSA1 datasheetBFP840FESDH6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10029
6000 +: $ 0.09382
15000 +: $ 0.08735
30000 +: $ 0.08282
75000 +: $ 0.08088
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP
Base Part Number: BFP840
Description

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The BFP840FESDH6327XTSA1 is a modern bipolar transistor of the RF type, meaning it is designed primarily for use in radio frequency applications. This is accomplished through its design as an amplifier and its ability to operate across a range of frequencies. The technology behind this transistor allows it to be used in a broad variety of communication, consumer electronics and industrial applications where its specific characteristics would benefit the circuit.The BFP840FESDH6327XTSA1 transistor is a two-terminal semiconductor device with a base, a collector, and an emitter. The base and collector are the two terminals of the device and the emitter is a metal strip, striping out from the middle of the two terminals. When the base is connected to a current source, the transistor operates as an amplifier, increasing the current that flows from collector to emitter. The gain of the amplifier is directly proportional to the current flowing through the base.The BFP840FESDH6327XTSA1 transistor has a high frequency response, meaning that it can operate over a wide range of frequencies. As a result, it can be used in many applications where a high frequency response is required, such as in wireless communication systems or for signal amplification. Additionally, the transistor can be configured for broad band, narrow band, or audio frequencies.The transistor also has a high power dissipation capability, meaning that it can handle high current levels without overheating. This makes it suitable for applications where high power levels are required. It also has high voltage endurance and can be used in high voltage circuits.In addition to its high frequency response and power dissipation capabilities, the BFP840FESDH6327XTSA1 transistor also offers excellent thermal stability. This enables it to be used in applications that require high levels of accuracy, such as medical equipment.The BFP840FESDH6327XTSA1 transistor has been designed for use in a wide range of applications. Its high frequency response, power dissipation capability, and thermal stability make it ideal for use in communication and industrial circuits, as well as consumer electronics. Its great versatility also makes it suitable for use in many other applications.Overall, the BFP840FESDH6327XTSA1 transistor is an excellent choice for a wide range of applications, due to its high frequency response, power dissipation capability, and thermal stability. Its use across a broad range of frequencies makes it suitable for many applications where its specific characteristics would benefit the circuit. Additionally, its high power dissipation capability, noise suppression, and thermal stability make it a great choice for communication, industrial, and consumer electronics. As a result, it is a versatile and reliable solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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