BFR28A51P-1F80 Allicdata Electronics
Allicdata Part #:

BFR28A51P-1F80-ND

Manufacturer Part#:

BFR28A51P-1F80

Price: $ 0.00
Product Category:

Uncategorized

Manufacturer: ITT Cannon, LLC
Short Description: ER 43C 43#16 PIN RECP
More Detail: N/A
DataSheet: BFR28A51P-1F80 datasheetBFR28A51P-1F80 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Active
Description

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BFR28A51P-1F80 is a component used in a variety of electrical systems to provide power. This component is part of the range of high-performance MOSFET components produced by NXP, and has numerous applications thanks to its wide range of features and specifications. This article provides an overview of the main applications of the BFR28A51P-1F80 component, as well as its working principle.

Application Field

The BFR28A51P-1F80 component is mainly used in power conversion systems. It is particularly suitable for applications such as dc-dc converters, ac-dc converters, switched-mode power supplies, solar power converters, and motor drives. Other potential applications include inverters for air conditioners, down converters, uninterruptable power supplies, electric vehicles, and medical equipment. The wide power range of the component (1.6 to 75 A) makes it suitable for a variety of electronic systems.

This component is also designed for applications requiring high power, low switching frequency, and high reliability. The BFR28A51P-1F80 has a tough structure consisting of a metal substrate, drain and source, and gate. The component is designed for a long life span, so it is suitable for applications requiring multiple switching cycles. This component is also designed for high ripple rates and low oscillations.

Working Principle

The BFR28A51P-1F80 is a semiconductor device based on the MOSFET (metal-oxide-semiconductor field-effect transistor) principle. The basic structure of the component consists of a substrate, drain, source, and gate. When an electric potential is applied to the gate, it creates an electric field that changes the conductivity of the channel between the drain and source. This allows for the passage of electric current, and the control of the amount of current passing through the channel.

The device works by using a low gate voltage to reduce the on-state resistance of the channel. As the gate voltage increases, more current is allowed to flow through the device, and a higher voltage drop across the channel. The device can be used to control the power flow in electronic systems, making it a vital component in many modern applications.

Conclusion

The BFR28A51P-1F80 component from NXP is an essential component for many applications requiring power conversion. It is mainly used in systems requiring high power, reliability, and low noise. The component is based on the MOSFET principle, which works by controlling the flow of current between its drain and source. This versatile component can be used in a variety of applications, making it ideal for many modern electronic systems.

The specific data is subject to PDF, and the above content is for reference

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