BFT25A,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	1.8dB ~ 2dB @ 1GHz
Gain:	--
Power - Max:	32mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500µA, 1V
Current - Collector (Ic) (Max):	6.5mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFT25

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BFT25A/215 transistors are bipolar junction field-effect transistors (BJTs) that are most commonly used in radio frequency (RF) applications. These transistors are specifically designed for this purpose and have a higher level of performance than other BJTs when used in RF applications. They are also relatively inexpensive, making them a popular choice for this type of application.In general, BJTs are devices that consist of three terminals and are used to amplify or switch electrical signals. These transistors have both a p-type and n-type semiconductor material and a base terminal, which serves to control the flow of current between the two material regions. The base terminal is controlled by current and/or voltage. The p-type region is called the collector and the n-type region is called the emitter. When the base terminal is in a forward-biased position, current will be allowed to flow from the collector to the emitter.The BFT25A/215 transistors are designed for high-frequency applications and feature an ultra-high frequency of up to 40 GHz. This makes them an excellent choice for communication systems, such as cell phones, that require transistors that can operate at high frequencies without introducing unwanted noise or signal distortion.The BFT25A/215 transistors can handle up to 200 mA of collector current, making them well-suited for relatively high-power applications. In addition, they have a high input and output impedance and wide operating temperature range, from -55°C to 150°C. This makes them suitable for use in applications where the environment can be quite extreme.When it comes to RF applications, the BFT25A/215 transistors are designed to provide a low noise, high gain performance. This is due to their design, which features a low input voltage noise and high output resistance. Additionally, the transistors have excellent thermal stability and a high power saturation level, making them suitable for high-power applications.The BFT25A/215 transistors are also relatively easy to use and can be integrated into a variety of circuit designs with relative ease. Additionally, they feature what is known as “flip-chip packaging” which allows the transistors to be soldered horizontally instead of vertically, which makes them easier to handle.In conclusion, the BFT25A/215 transistors are an excellent choice for RF applications due to their ability to handle high frequencies, their low input voltage noise, high output resistance, and their wide operating temperature range. Additionally, their low cost makes them a viable option for a variety of applications, and their easy integration into circuits makes them a popular choice.

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