Allicdata Part #: | 568-13123-2-ND |
Manufacturer Part#: |
BFU910FX |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN WIDEBAND DFP4 |
More Detail: | RF Transistor NPN 9.5V 15mA 300mW Surface Mount S... |
DataSheet: | BFU910FX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05464 |
6000 +: | $ 0.04918 |
15000 +: | $ 0.04371 |
30000 +: | $ 0.04098 |
75000 +: | $ 0.03643 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 9.5V |
Gain: | 13.5dB |
Power - Max: | 300mW |
Current - Collector (Ic) (Max): | 15mA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-343F |
Supplier Device Package: | SOT-343F |
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Transistors are a type of semiconductor device which are used to control and amplify electronic signals. Bipolar transistors, commonly known as BJTs, are often used in radio frequency (RF) applications. One common type of BJT in an RF application is the BFU910FX.
The BFU910FX is a NPN silicon transistor with a high frequency of up to 500MHz. The device features low noise, low distortion and high gain. It is especially well-suited for RF amplifier applications including cell phones, radios and other digital communication devices.
The BFU910FX is composed of a three-layer semiconductor structure. The two outer layers, called the base and the collector, are made of doped silicon and are separated by a thin layer of silicon between them. The inner layer, or the emitter, consists of lightly doped silicon. The emitter and the base are connected to the electrons which are the charge carriers in the transistor. These electrons flow through the base and the collector and create a current. The current then amplifies the signal which is passed through the transistor.
The working principle of the BFU910FX is relatively simple. In order for the BFU910FX to work, a DC voltage, referred to as the base bias, must be applied to the base. This bias creates a potential difference between the base and the emitter which creates a current through the transistor. This current is then amplified and passed on to the collector. In this way, the transistor amplifies the signal which is passed through it.
The BFU910FX has many applications in both commercial and military applications. This device is used in a variety of RF applications such as cell phones, radios, satellite receivers and many other digital communication equipment. It is also used in high-power amplifiers and other power technologies such as switches and linear regulators.
The BFU910FX is a versatile and reliable BJT which is well-suited for RF applications. It has a high frequency of up to 500MHz, low noise and low distortion, and high gain. This device is used for a variety of applications including cell phones, radios and other digital communication devices as well as high-power amplifiers and other power technologies. The working principle of the BFU910FX is relatively simple and it amplifies the signal which is passed through it.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BFU910FX | NXP USA Inc | 0.06 $ | 1000 | TRANS NPN WIDEBAND DFP4RF... |
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