BGA5M1BN6E6327XTSA1 RF/IF and RFID |
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Allicdata Part #: | BGA5M1BN6E6327XTSA1TR-ND |
Manufacturer Part#: |
BGA5M1BN6E6327XTSA1 |
Price: | $ 0.15 |
Product Category: | RF/IF and RFID |
Manufacturer: | Infineon Technologies |
Short Description: | RF SILICON MMIC |
More Detail: | RF Amplifier IC LTE 1.805GHz ~ 2.2GHz |
DataSheet: | BGA5M1BN6E6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.13254 |
24000 +: | $ 0.12890 |
Series: | #3, Buchanan |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 1.805GHz ~ 2.2GHz |
P1dB: | -17dBm |
Gain: | 19.3dB |
Noise Figure: | 0.65dB |
RF Type: | LTE |
Voltage - Supply: | 1.5 V ~ 3.6 V |
Current - Supply: | 9.5mA |
Test Frequency: | 2GHz |
Package / Case: | 6-XFDFN |
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RF amplifiers are a type of electronic device used to increase the power level of an RF signal. The BGA5M1BN6E6327XTSA1 RF amplifier is a high-efficiency, wide-band amplifier that is suitable for a variety of applications. It is a highly integrated GaN-on-Silicon technology, which makes it a reliable and cost-effective choice for an RF amplifier.
The BGA5M1BN6E6327XTSA1 RF amplifier is a two-stage orthogonal power amplifier, capable of delivering up to 29 dB of gain and 3W of output power in the frequency range of 1 to 6 GHz. The device features low noise figure, high linearity, high efficiency, high input and output isolation, and good matching. It supports multiple modulation techniques such as AM/FM modulation, SSB modulation, multi-carrier modulation, etc. Due to its wide gain bandwidth, it is suitable for various communication systems such as WLAN, Bluetooth, and satellite. The amplifier also features high power-added efficiency, high third order input intercept point, and wide dynamic range.
The working principle of the BGA5M1BN6E6327XTSA1 RF amplifier is based on the theory of electrical impedance matching. The amplifier is designed with an input and output network that matches the load impedance of the amplifier with the impedance of the driven device. The impedance is adjusted by using high-frequency passive elements, such as capacitors and inductors. This helps reduce the standing wave ratio and maximize the power transfer between the amplifier and the load. The amplifier also has an amplifier gain, which is controlled by the bias voltage applied to the amplifier. This ensures the amplification of the RF signal without distortion or noise.
In conclusion, the BGA5M1BN6E6327XTSA1 RF amplifier is a cost-effective and reliable solution for a variety of applications. It features high efficiency, wide bandwidth, low noise figure, and high linearity, making it suitable for various communication systems. The device is a two-stage orthogonal power amplifier, and its working principle is based on the impedance matching technique. With its excellent performance, the BGA5M1BN6E6327XTSA1 RF amplifier is an ideal choice for applications such as WLAN, Bluetooth, and satellite.
The specific data is subject to PDF, and the above content is for reference
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