BGA7H1N6E6327XTSA1 RF/IF and RFID |
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Allicdata Part #: | BGA7H1N6E6327XTSA1TR-ND |
Manufacturer Part#: |
BGA7H1N6E6327XTSA1 |
Price: | $ 0.22 |
Product Category: | RF/IF and RFID |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP SI-MMIC TSNP-6 |
More Detail: | RF Amplifier IC LTE 2.3GHz ~ 2.69GHz TSNP-6-2 |
DataSheet: | BGA7H1N6E6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.20491 |
30000 +: | $ 0.19928 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 2.3GHz ~ 2.69GHz |
P1dB: | -8dBm |
Gain: | 12.5dB |
Noise Figure: | 0.6dB |
RF Type: | LTE |
Voltage - Supply: | 1.5 V ~ 3.3 V |
Current - Supply: | 4.7mA |
Test Frequency: | -- |
Package / Case: | 6-XFDFN |
Supplier Device Package: | TSNP-6-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are widely used in various fields to amplify signals while maintaining low noise, and BGA7H1N6E6327XTSA1 ampifier is an example of a wideband amplifier with high power and gain that can fit any system application.
First of all, one of the main features of BGA7H1N6E6327XTSA1 amplifier is its power output – it can deliver an output power of up to 4.2W while offering very low noise. This makes it suitable for applications including low noise radio systems, as well as amplifier applications where additional linearity and gain are needed. It offers a low noise gain of 27 dB and a bandwidth of 2 GHz, making it suitable for a wide variety of applications. Additionally, it has a wide operating temperature range of -45°C to +85°C, making it well suited for extreme environmental conditions. With low current consumption and low bias voltage, this amplifier can also be used in low power applications.
The BGA7H1N6E6327XTSA1 amplifier utilises a differential input and output structure combined with a high gain and low noise design to produce a wideband amplifier suitable for multiple application fields. As a differential input design, the amplifier is able to reject common mode signals, making it an ideal choice for low noise applications requiring clean signal noise ratio and high dynamic range. Its differential output structure, which includes an emitter and ground combined with an NPN transistor pair, offer excellent isolation from ground and a low output impedance. The output impedance is fixed at a range of 10 to 16 ohms, making it highly suitable for applications that require a higher output power level.
In terms of working principle, the BGA7H1N6E6327XTSA1 amplifier is based on the classic two-stage cascode configuration. A cascode configuration places two emitter-ground transistor pairs back to back, with the one emitter connected to a voltage source, acting as a voltage follower and providing current amplification. This two-stage cascode configuration offers a combination of low noise, high gain, and low distortion while also providing a good input and output match. This makes it suitable for a wide range of applications including wireless communication, antenna systems, and amplifier systems.
In conclusion, the BGA7H1N6E6327XTSA1 amplifier is an ideal amplifier for a wide range of applications and environments. The wide operating temperature range, low noise, and high gain make it suitable for applications ranging from low power and low noise radio systems to antenna systems and amplifier systems. Its two-stage cascode configuration combines a low noise, high gain, and low distortion to provide a good input and output match, making it highly suitable for multiple applications.
The specific data is subject to PDF, and the above content is for reference
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