BGAU1A10E6327XTSA1

The BGAU1A10E6327XTSA1 RF amplifier is a high power device in the wireless industry. It is a hybrid amplifier with both L-band and X-band capability and a relatively small form factor. The amplifier has an input power of 13 dBm and an output power of 30dBm across a frequency range of 700-8000MHz. It features gain control, temperature compensation, and reverse polarity protection.The BGAU1A10E6327XTSA1 is suitable for a range of applications, such as point-to-point systems, microwave backhaul systems, Wi-Fi systems, base station systems, radio frequency front ends, and satellite communication systems. Its compact size and low power consumption makes it ideal for portable devices and mobile applications.The BGAU1A10E6327XTSA1 amplifier uses a gallium arsenide (GaAs) semiconductor process. The device uses a discrete bipolar transistor design that is capable of handling up to 10 watts of power with a minimum of external components. The amplifier consists of an input, an output and a bias circuits. The input circuit consists of a matching network and a high power GaAs FET transistor. The output circuit includes an output matching network, a power amplifier, and an adjustable gain stage.The amplifier is designed to be stable across both temperature and frequency. Its gain control feature allows users to adjust the amplifier gain from 0 to 30 dB with a minimum setting of -10 dB. The amplifier has reverse polarity protection and a low power consumption, making it an ideal choice for battery powered applications.The BGAU1A10E6327XTSA1 amplifier can be used in a variety of systems, including point-to-point systems, base station systems, Wi-Fi systems, microwave backhaul systems, radio frequency front ends, and satellite communication systems. Its high power capability, low power consumption, and compact size make it an ideal choice for a wide range of applications.

BGAU1A10E6327XTSA1

Infineon Tec...

0.25 $

1000

IC RF MMIC LNA 10ATSLPRF ...